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US 10,763,409 B2Granted
LED light source, LED light source manufacturing method, and direct display device thereof
AssigneeUnity Opto Technology Co., Ltd.
InventorsHung-Li Yeh, Wei-Chung Lin, Ko-Wei Lu
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Abstract
Disclosed are an LED light source, an LED light source manufacturing method, and their direct display device. The LED light source includes a base, at least an LED chip, an anti-vulcanization structure, a light excitation structure, an encapsulation structure and a protection structure. The LED light source can overcome catalyst poison or vulcanization of the light-emitting material effectively to improve product yield and reliability of the LED light source. In the meantime, the LED light source has the feature of a better light emission performance.
Claims22
An LED light source manufacturing method, comprising the steps of:
- providing a base having an upper edge, a light emitting region formed and enclosed by the upper edge, and an inner mounting surface inwardly and concavely formed on the base along the upper edge;
- forming a reflective layer on the inner mounting surface;
- providing at least an LED chip installed at a bottom position of the inner mounting surface by a flip chip method or combining two metal wire bonds by a solid crystallization method;
- injecting a low-viscosity and high-volatilization anti-vulcanization solvent to the inner mounting surface of the base, so that the anti-vulcanization solvent completely covers all metal materials on the inner mounting surface;
- resting or heating to volatize the anti-vulcanization solvent to form an anti-vulcanization structure, and the anti-vulcanization structure being in a continuous and uninterruptible thin film state;
- providing a light excitation structure including at least a fluorescent powder containing one selected from the group consisting of sulfur, lead, and phosphorus, and the light excitation structure being installed in the base;
- packaging the light excitation structure and the LED chip by an encapsulation structure, and the anti-vulcanization structure isolating all metal materials on the inner mounting surface from directly contacting with the encapsulation structure, and the encapsulation structure being made of organic silicone and containing a platinum catalyst;
- and
- dispensing a protection structure to the base and covering the encapsulation structure;
- wherein the encapsulation structure has a hardness lower than a hardness of the protection structure,
- wherein the protection structure further comprises a plurality of uniform light particles scattered in the protection structure, and the uniform light particle is selected from the group consisting of SiO2, BN, Al2O3, and TiO2 or a combination thereof,
- the LED chip has a light emission wavelength falling within a range of 400-460 nm, and the light excitation structure comprises a green fluorescent powder, a first red fluorescent powder and a second red fluorescent powder, and the green fluorescent powder contains sulfur, and the first red fluorescent powder does not contain sulfur, and the second red fluorescent powder contains sulfur;
- the first red fluorescent powder is selected from the group consisting of T2XF6:Mn4+, M2Si5N8:Eu2+, and CaAlSiN3:Eu2+;
- T is selected from the group consisting of Li, Na, K, and Rb, and X is selected from the group consisting of Ge, Si, Sn, Zr, and Ti;
- and M is selected from the group consisting of Ca, Sr, and Ba;
- and the second red fluorescent powder is selected from the group consisting of CaS:Eu2+, SrS:Eu2+, Ba2ZnS3:Mn2+, and a red quantum dot.
13 more elements
An LED light source manufacturing method, comprising the steps of:
- providing a base having an upper edge, a light emitting region formed and enclosed by the upper edge, and an inner mounting surface inwardly and concavely formed on the base along the upper edge;
- forming a reflective layer on the inner mounting surface;
- providing at least an LED chip installed at a bottom position of the inner mounting surface by a flip chip method or combining two metal wire bonds by a solid crystallization method;
- injecting a low-viscosity and high-volatilization anti-vulcanization solvent to the inner mounting surface of the base, so that the anti-vulcanization solvent completely covers all metal materials on the inner mounting surface;
- resting or heating to volatize the anti-vulcanization solvent to form an anti-vulcanization structure, and the anti-vulcanization structure being in a continuous and uninterruptible thin film state;
- providing a light excitation structure including at least a fluorescent powder containing one selected from the group consisting of sulfur, lead, and phosphorus, and the light excitation structure being installed in the base;
- packaging the light excitation structure and the LED chip by an encapsulation structure, and the anti-vulcanization structure isolating all metal materials on the inner mounting surface from directly contacting with the encapsulation structure, and the encapsulation structure being made of organic silicone and containing a platinum catalyst and dispensing a protection structure to the base and covering the encapsulation structure;
- wherein the encapsulation structure has a hardness lower than a hardness of the protection structure,
- wherein the protection structure further comprises a plurality of uniform light particles scattered in the protection structure, and the uniform light particle is selected from the group consisting of SiO2, BN, Al2O3, and TiO2 or a combination thereof,
- the LED chip comes with a plural quantity, and the LED chips include a chip with a light emission wavelength falling within a range of 400-460 nm and a green chip, and the light excitation structure includes a second red fluorescent powder, and the second red fluorescent powder contains sulfur;
- and the second red fluorescent powder is selected from the group consisting of CaS:Eu2+, SrS:Eu2+, Ba2ZnS3:Mn2+, and a red quantum dot.
8 more elements
An LED light source manufacturing method, comprising the steps of:
- providing a base having an upper edge, a light emitting region formed and enclosed by the upper edge, and an inner mounting surface inwardly and concavely formed on the base along the upper edge;
- forming a reflective layer on the inner mounting surface;
- providing at least an LED chip installed at a bottom position of the inner mounting surface by a flip chip method or combining two metal wire bonds by a solid crystallization method;
- injecting a low-viscosity and high-volatilization anti-vulcanization solvent to the inner mounting surface of the base, so that the anti-vulcanization solvent completely covers all metal materials on the inner mounting surface;
- resting or heating to volatize the anti-vulcanization solvent to form an anti-vulcanization structure, and the anti-vulcanization structure being in a continuous and uninterruptible thin film state;
- providing a light excitation structure including at least a fluorescent powder containing one selected from the group consisting of sulfur, lead, and phosphorus, and the light excitation structure being installed in the base;
- packaging the light excitation structure and the LED chip by an encapsulation structure, and the anti-vulcanization structure isolating all metal materials on the inner mounting surface from directly contacting with the encapsulation structure, and the encapsulation structure being made of organic silicone and containing a platinum catalyst and dispensing a protection structure to the base and covering the encapsulation structure;
- wherein the encapsulation structure has a hardness lower than a hardness of the protection structure, wherein the protection structure further comprises a plurality of uniform light particles scattered in the protection structure, and the uniform light particle is selected from the group consisting of SiO2, BN, Al2O3, and TiO2 or a combination thereof,
- the LED chip comes with a plural quantity, and the LED chips include a chip with a light emission wavelength falling within a range of 400-460 nm and a green chip, and the light excitation structure comprises a first red fluorescent powder and a second red fluorescent powder, and the first red fluorescent powder does not contain sulfur, and the second red fluorescent powder contains sulfur;
- and the first red fluorescent powder is selected from the group consisting of T2XF6:Mn4+, M2Si5N8:Eu2+, and CaAlSiN3:Eu2+;
- T is an element selected from the group consisting of Li, Na, K, and Rb;
- X is an element selected from the group consisting of Ge, Si, Sn, Zr and Ti;
- M is an element selected from the group consisting of Ca, Sr, and Ba;
- and the second red fluorescent powder is selected from the group consisting of CaS:Eu2+, SrS:Eu2+, Ba2ZnS3:Mn2+, and a red quantum dot.
11 more elements
Dependencies are inferred from the claim text.