Semiconductor light emitting device

A semiconductor light emitting device, comprising:

• a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer;
• a transparent electrode layer on the second conductivity-type semiconductor layer;
• a first insulating layer on the light emitting structure to cover the transparent electrode layer, the first insulating layer including a plurality of holes connected to the transparent electrode layer;
• a reflective electrode layer on the first insulating, layer and connected to the transparent electrode layer through the plurality of holes;
• a second insulating layer on the first insulating layer to cover the reflective electrode layer, the second insulating layer including at least one opening;
• and
• a connection electrode on the second insulating layer and connected to the reflective electrode layer through the at least one opening,
• wherein the connection electrode includes a first electrode layer having an edge region and an internal region surrounded by the edge region, and a second electrode layer on the internal region of the first electrode layer, the edge region having a thickness less than a thickness of the internal region.