Light emitting diode element and method for manufacturing same

A method for manufacturing a light emitting diode element of a flip-chip type, the method comprising:

• forming a first n-type group III nitride semiconductor layer on an under-substrate, under a condition in which facet growth is generated preferentially, such that a carrier concentration is at least 1×1019 cm−1 but less than 3×1020 cm−3;
• forming a second n-type group III nitride semiconductor layer on the first n-type group III nitride semiconductor layer, such that a carrier concentration is at least 5×1017 cm−3 but less than 1×1019 cm−3;
• forming a light emitting layer configured by a group III nitride semiconductor on the second n-type group III nitride semiconductor layer;
• and
• forming a p-type group III nitride semiconductor layer on the light emitting layer, wherein:
• an upper surface of the second n-type group III nitride semiconductor layer facing the light emitting layer is uneven,
• an upper face of the first n-type group III nitride semiconductor layer facing the second n-type group III nitride semiconductor layer is uneven, and
• a height of unevenness of the upper surface of the first n-type group III nitride semiconductor layer is greater than a height of unevenness of the upper surface of the second n-type group III nitride semiconductor layer.

A light emitting diode element of a flip-chip type comprising:

• a stacked body structure configured by stacking following layers sequentially:
• a first n-type group III nitride semiconductor layer having a carrier concentration that is at least 1×1 019 cm−3 but less than 3×1 020 cm−3;
• a second n-type group III nitride semiconductor layer having a carrier concentration that is at least 5×1 017 cm−3 but less than 1×1019 cm−3;
• a light-emitting layer formed by a group III nitride semiconductor;
• and
• a p-type group III nitride semiconductor layer;
• an n-side ohmic electrode in ohmic contact with at least one of the first n-type group III nitride semiconductor layer and the second n-type group III nitride semiconductor layer;
• a p-side ohmic electrode in ohmic contact with the p-type group III nitride semiconductor layer, wherein:
• a height of unevenness on an interface between the first n-type group III nitride semiconductor layer and the second n-type group III nitride semiconductor layer is greater than a height of unevenness on an interface between the second n-type group III nitride semiconductor layer and the light emitting layer;
• the n-side ohmic electrode and the p-side ohmic electrode are disposed on a same side of the stacked body structure,
• a contact surface between the n-side ohmic electrode and the stacked body structure is located in a region of the interface between the first n-type group III nitride semiconductor layer and the second n-type group III nitride semiconductor layer, and
• the n-side ohmic electrode is in ohmic contact with both of the first n-type group III nitride semiconductor layer and the second n-type group III nitride semiconductor layer.