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US 10,763,394 B2Granted
Light emitting element having excellent contact between semiconductor layer and electrode
AssigneeLG Innotek Co., Ltd.
InventorsYong Gyeong Lee, Min Sung Kim, Su Ik Park, Youn Joon Sung, Kwang Yong Choi
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Abstract
An embodiment provides a light emitting element comprising: a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer; a plurality of conductor layers selectively arranged on the second conductive semiconductor layer; and a reflective electrode disposed on the conductor layers and the second conductive semiconductor layer.
Claims14
A light emitting device package comprising:
- a substrate;
- a light emitting device disposed on the substrate and including a first electrode, and a second electrode;
- and
- a plurality of conductive adhesive elements disposed between the substrate and the light emitting device;
- wherein the light emitting device includes:
- a sapphire substrate;
- a semiconductor structure disposed on a lower surface of the sapphire substrate and including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer;
- the first electrode electrically connected to the first conductive type semiconductor layer;
- the second electrode electrically connected to the second conductive type semiconductor layer;
- and
- a plurality of conductive layers spaced apart from each other, and disposed between the second electrode and the second conductive type semiconductor layer,
- wherein a lowermost surface of each conductive layer has a rectangular shape,
- wherein the plurality of conductive layers are evenly spaced apart from each other by a minimum distance that is less than a minimum width of each of the plurality of conductive layers,
- wherein the second electrode contacts each of the plurality of conductive layers and covers the plurality of conductive layers,
- wherein the plurality of conductive adhesive elements include a first conductive adhesive element disposed between the first electrode and the substrate, and a second conductive adhesive element disposed between the second electrode and the substrate,
- wherein the second electrode includes an uneven surface contacting with the second conductive adhesive element,
- wherein the uneven surface of the second electrode comprises a plurality of concave portions disposed between the plurality of conductive layers and a plurality of convex portions,
- wherein the second conductive adhesive element is disposed on the concave portion,
- wherein a distance between the plurality of conductive layers is 20 μm to 400 μm,
- wherein the first electrode is disposed at a center of the semiconductor structure and the plurality of conductive layers surround the first electrode,
- a minimum width of the first electrode is equal to the minimum width of each of the plurality of conductive layers,
- a minimum distance between the first electrode and one of the plurality of conductive layers is same as the minimum distance between the plurality of conductive layers, and
- wherein the minimum width of each of the plurality of conductive layers is 20 μm to 400 μm.
20 more elements
A light emitting device comprising:
- a substrate;
- a first conductive type semiconductor layer disposed on the substrate;
- an active layer disposed on the first conductive type semiconductor layer;
- a second conductive type semiconductor layer disposed on the active layer;
- a patterned p-type semiconductor layer on the second conductive type semiconductor layer, and including a plurality of patterned portions and a plurality of groove portions passing through the p-type semiconductor layer;
- a first electrode electrically connected to the first conductive type semiconductor layer;
- a second electrode electrically connected to the second conductive type semiconductor layer via the patterned p-type semiconductor layer;
- a first conductive adhesive element disposed on the first electrode;
- and
- a second conductive adhesive element disposed on the second electrode,
- wherein the plurality of patterned portions includes a plurality of rectangular top surfaces separated from each other, and a plurality of side surfaces separated from each other,
- wherein each of the plurality of groove portions is between two adjacent side surfaces among the plurality of side surfaces,
- wherein the two adjacent side surfaces are spaced apart from each other by a width of a corresponding groove portion among the plurality of groove portions, and the width of the corresponding groove portion is a minimum distance between the two adjacent side surfaces,
- wherein the width of the corresponding groove portion is less than a minimum width of each of the plurality of rectangular top surfaces,
- wherein the second electrode includes an uneven surface contacting with the second conductive adhesive element,
- wherein the uneven surface of the second electrode comprises a plurality of concave portions disposed between the plurality of conductive layers and a plurality of convex portions,
- wherein the second conductive adhesive element is disposed on the concave portion,
- wherein a distance between the plurality of conductive layers is 20 μm to 400 μm,
- wherein the first electrode is disposed at a center of the semiconductor structure and the plurality of rectangular top surfaces surround the first electrode,
- a minimum width of the first electrode is equal to the minimum width of each of the plurality of rectangular top surfaces,
- a minimum distance between the first electrode and one of the plurality of rectangular top surfaces is same as the minimum distance between the plurality of rectangular top surfaces, and
- wherein the minimum width of each of the plurality of rectangular top surfaces is 20 μm to 400 μm.
19 more elements
Dependencies are inferred from the claim text.