Optical device wafer processing method

An optical device wafer processing method for dividing an optical device wafer along a plurality of division lines formed on the front side of said optical device wafer to obtain a plurality of individual device chips, said optical device wafer being composed of a wafer substrate and a light emitting layer formed on said wafer substrate, said light emitting layer having a plurality of optical devices individually corresponding to said device chips, said optical device wafer processing method comprising:

• a laser processed groove forming step of applying a laser beam having an absorption wavelength to said wafer substrate, to said optical device wafer along each division line, thereby forming a plurality of laser processed grooves along each division line on said optical device wafer, wherein each of said plurality of laser processed grooves has a plurality of surfaces;
• a V groove forming step of forming a V groove along each division line on said optical device wafer by using a cutting blade having a V-shaped tip, where all of said surfaces of said plurality of laser processed grooves are removed by said cutting blade, after performing said laser processed groove forming step;
• and
• a dividing step of applying an external force to said optical device wafer along each V groove after performing said V groove forming step, thereby dividing said optical device wafer into said individual device chips;
• the depth of each laser processed groove being set smaller than the depth of cut by said cutting blade.

An optical device wafer processing method for dividing an optical device wafer along a plurality of division lines formed on the front side of said optical device wafer to obtain a plurality of individual device chips, said optical device wafer being composed of a wafer substrate and a light emitting layer formed on said wafer substrate, said light emitting layer having a plurality of optical devices individually corresponding to said device chips, said optical device wafer processing method comprising:

• a laser processed groove forming step of applying a laser beam having an absorption wavelength to said wafer substrate, to said optical device wafer along each division line, thereby forming a plurality of laser processed grooves along each division line on said optical device wafer;
• a V groove forming step of forming a V groove along each division line on said optical device wafer by using a cutting blade having a V-shaped tip in the condition where said plurality of laser processed grooves are removed by said cutting blade, after performing said laser processed groove forming step;
• and
• a dividing step of applying an external force to said optical device wafer along each V groove after performing said V groove forming step, thereby dividing said optical device wafer into said individual device chips;
• the depth of each laser processed groove being set smaller than the depth of cut by said cutting blade, wherein said depths of at least two of said plurality of laser processed grooves are different.