LED structure with minimized light emission area

A method for manufacturing a light emitting apparatus, the method comprising:

• forming a first semiconductor layer on a substrate, the first semiconductor layer having a doping type;
• forming a light emission layer on the first semiconductor layer;
• forming a second semiconductor layer on the light emission layer such that the light emission layer is situated between the first semiconductor layer and the second semiconductor layer, the second semiconductor layer having a doping type opposite that of the first semiconductor layer;
• forming an electrical contact on the second semiconductor layer, wherein the electrical contact is an ohmic contact to the second semiconductor layer;
• etching the first semiconductor layer, the second semiconductor layer, and the light emission layer to form a mesa;
• and
• forming a first conductive body around the electrical contact, wherein the first conductive body is a non-ohmic contact to the second semiconductor layer.

An apparatus fabricated by a method, the method comprising:

• forming a first semiconductor layer on a substrate, the first semiconductor layer having a doping type;
• forming a light emission layer on the first semiconductor layer;
• forming a second semiconductor layer on the light emission layer such that the light emission layer is situated between the first semiconductor layer and the second semiconductor layer, the second semiconductor layer having a doping type opposite that of the first semiconductor layer;
• forming an electrical contact on the second semiconductor layer, wherein the electrical contact is an ohmic contact to the second semiconductor layer;
• etching the first semiconductor layer, the second semiconductor layer, and the light emission layer to form a mesa;
• and
• forming a first conductive body around the electrical contact, wherein the first conductive body is a non-ohmic contact to the second semiconductor layer.