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US 10,763,380 B2Granted
Photodetector device with integrated high-contrast grating polarizer
AssigneeAms AG
InventorsJens Hofrichter, Jan Enenkel
Life of this patent
Estimating the term…
Abstract
The photodetector device comprises a substrate (1) of semiconductor material, a sensor region (2) in the substrate, a plurality of grid elements (4) arranged at a distance (d) from one another above the sensor region, the grid elements having a refractive index, a region of lower refractive index (3), the grid elements being arranged on the region of lower refractive index, and a further region of lower refractive index (5) covering the grid elements.
Claims15
A photodetector device, comprising:
- a substrate of semiconductor material,
- a sensor region in the substrate,
- a plurality of grid elements arranged at a distance from one another above the sensor region, the grid elements having a refractive index,
- a first region having a refractive index lower than the refractive index of the grid elements, the grid elements being arranged on the first region, and
- a further region having a refractive index lower than the refractive index of the grid elements, the further region covering the grid elements,
- wherein the grid elements have a width, and
- wherein the photodetector device is configured such that, during operation, the photodetector device detects electromagnetic radiation using the sensor region, and
- wherein the photodetector device is configured such that, during operation, the sum of the width and the distance between adjacent grid elements is smaller than a wavelength of the electromagnetic radiation in the grid elements.
5 more elements
A photodetector device, comprising:
- a substrate of semiconductor material;
- a sensor region in the substrate;
- a plurality of grid elements arranged at a distance from one another above the sensor region, the grid elements having a refractive index;
- a first region having a refractive index lower than the refractive index of the grid elements, the first region formed in the substrate by a shallow trench isolation, a buried oxide or a field oxide region, the grid elements being arranged on the first region;
- and
- a further region having a refractive index lower than the refractive index of the grid elements, the further region comprising a dielectric layer, the further region covering the grid elements,
- wherein the grid elements have a width, and
- wherein the photodetector device is configured such that, during operation, the photodetector device detects electromagnetic radiation using the sensor region, and
- wherein the photodetector device is configured such that, during operation, the sum of the width and the distance between adjacent grid elements is smaller than a wavelength of the electromagnetic radiation in the grid elements.
6 more elements
A photodetector device, comprising:
- a substrate of semiconductor material;
- a sensor region in the substrate for the detection of electromagnetic radiation;
- a plurality of grid elements arranged at a distance from one another above the sensor region, the grid elements having a refractive index;
- a first region having a refractive index lower than the refractive index of the grid elements, the first region formed by a cover layer above the substrate, the grid elements being arranged on the first region;
- and
- a further region having a refractive index lower than the refractive index of the grid elements, the further region covering the grid elements, the further region comprising ambient air,
- wherein the grid elements have a width, and
- wherein the photodetector device is configured such that, during operation, the photodetector detects electromagnetic radiation using the sensor region, and
- wherein the photodetector device is configured such that, during operation, the sum of the width and the distance between adjacent grid elements is smaller than a wavelength of the electromagnetic radiation in the grid elements.
6 more elements
Dependencies are inferred from the claim text.