Semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsYutaka Okazaki, Akihisa Shimomura, Naoto Yamade, Tomoya Takeshita, Tetsuhiro Tanaka
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Abstract
A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor with the first insulator positioned between the semiconductor and the first conductor, and a second conductor and a third conductor, which are in contact with the semiconductor. One or more of the first to third conductors include a region containing tungsten and one or more elements selected from silicon, carbon, germanium, tin, aluminum, and nickel.
Claims12
A semiconductor device comprising:
- an oxide semiconductor;
- an insulator in contact with the oxide semiconductor;
- a first conductor overlapping with the oxide semiconductor with the insulator between the oxide semiconductor and the first conductor;
- and
- second and third conductors in contact with the oxide semiconductor and the insulator,
- wherein at least one of the second and third conductors includes a region containing silicon and oxygen on a surface of the one of the second and third conductors, and
- wherein the oxide semiconductor and the insulator each contains In, Ga, and Zn.
A semiconductor device comprising:
- an oxide semiconductor;
- a first insulator in contact with a first surface of the oxide semiconductor;
- a first conductor overlapping with the oxide semiconductor with the first insulator between the oxide semiconductor and the first conductor;
- second and third conductors in contact with the first surface of the oxide semiconductor and the first insulator;
- a second insulator in contact with a second surface of the oxide semiconductor;
- and
- a fourth conductor under the second insulator,
- wherein at least one of the second and third conductors includes a region containing silicon and oxygen on a surface of the one of the second and third conductors, and
- wherein the oxide semiconductor and the first insulator each contain In, Ga, and Zn.
Dependencies are inferred from the claim text.