Thin-film transistor, method of manufacturing the same, and display device
AssigneeJoled Inc.
InventorsNarihiro Morosawa, Yoshihiro Oshima
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Abstract
A thin film transistor is provided. The thin film transistor includes an oxide semiconductor layer including a source region, a drain region, and a channel region wherein a portion of the source and drain regions has an oxygen concentration less than the channel region. Further provided is a thin film transistor that includes an oxide semiconductor layer including a source region, a drain region, and a channel region, wherein a portion of the source and drain regions includes a dopant selected from the group consisting of aluminum, boron, gallium, indium, titanium, silicon, germanium, tin, lead, and combinations thereof.
Claims12
A thin film transistor comprising:
- a gate electrode,
- a gate insulating film,
- an oxide semiconductor layer having an island-like shape including
- a source region,
- a drain region, and
- a channel region, and
- a high-resistance material layer that is provided on and directly contacts the source and drain regions,
- wherein the gate electrode is provided between the gate insulating film and the high-resistance material layer and the gate electrode directly contacts with the gate insulating film and the high-resistance material layer,
- wherein a portion of the source and drain regions includes a dopant selected from the group consisting of aluminum, boron, gallium, indium, titanium, silicon, germanium, tin, lead, and combinations thereof,
- wherein a density of the dopant in the source and drain regions of the oxide semiconductor layer having the island-like shape is higher than the channel region of the oxide semiconductor layer having the island-like shape, and
- wherein the thin film transistor is a top gate transistor.
Dependencies are inferred from the claim text.