Gradient doped region of recessed fin forming a FinFET device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJyun-Hao Lin, Chun-Feng Nieh, Huicheng Chang, Yu-Chang Lin
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Abstract
An embodiment is a method of manufacturing a semiconductor device. The method includes forming a fin on a substrate. A gate structure is formed over the fin. A recess is formed in the fin proximate the gate structure. A gradient doped region is formed in the fin with a p-type dopant. The gradient doped region extends from a bottom surface of the recess to a vertical depth below the recess in the fin. A source/drain region is formed in the recess and on the gradient doped regions.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- forming a fin on a substrate;
- forming a gate structure over the fin;
- forming a recess in the fin proximate the gate structure;
- forming a gradient doped region in the fin with a p-type dopant, wherein forming the gradient doped region comprises:
- implanting a bottom surface of the recess with the p-type dopant, wherein a first doped region extends from the bottom surface of the recess to a vertical depth below the recess in the fin;
- and
- implanting sidewalls of the recess with the p-type dopant, wherein a second doped region is formed on portions of the sidewalls extending from the sidewalls into the fin;
- and
- forming a source/drain region in the recess and on the gradient doped region.
A method of manufacturing a semiconductor device, the method comprising:
- forming a first fin structure and a second fin structure on a substrate;
- forming a first gate structure over the first fin structure and a second gate structure over the second fin structure;
- forming a first recess in the first fin structure proximate the first gate structure;
- forming a gradient doped region in the first fin structure through the first recess, wherein forming the gradient doped region comprises:
- doping a bottom surface of the first recess, wherein a first doped region extends from the bottom surface of the first recess to a vertical depth below the first recess in the first fin structure;
- and
- doping sidewalls of the first recess to form a second doped region on portions of the sidewalls, the second doped region extending from sidewalls of the first recess into the first fin structure;
- forming a second recess in the second fin structure proximate the second gate structure;
- and
- forming respective epitaxial source/drain regions (i) in the first recess on the gradient doped region in the first fin structure and (ii) in the second recess in the second fin structure.
A method of manufacturing a semiconductor device, the method comprising:
- forming a fin on a substrate;
- forming a gate structure over the fin;
- forming a recess in the fin proximate the gate structure;
- forming a gradient doped region in the fin with a p-type dopant, wherein forming the gradient doped region comprises:
- performing a first ion implantation on a bottom surface of the recess with the p-type dopant, wherein a first doped region extends from the bottom surface of the recess to a vertical depth below the recess in the fin;
- and
- performing a second ion implantation on sidewalls of the recess with the p-type dopant, wherein a second doped region extends from the sidewalls into the fin, wherein a first dopant concentration along sidewalls of the recess is less than a second dopant concentration along a bottom of the recess;
- after forming the gradient doped region, epitaxially growing a semiconductor material in the recess;
- and
- forming a source/drain region in the gradient doped region.
Dependencies are inferred from the claim text.