Fin field effect transistor (FinFET) device structure with stop layer and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChe-Cheng Chang, Chih-Han Lin
Life of this patent
Estimating the term…
Abstract
A FinFET device structure and method for forming the same are provided. The Fin PET device structure includes a stop layer formed over a substrate and a fin structure formed over the stop layer. The FinFET device structure includes a gate structure formed over the fin structure and a source/drain (S/D) structure adjacent to the gate structure. A bottom surface of the S/D structure is located at a position that is higher than or level with a bottom surface of the stop layer.
Claims20
A method for forming a fin field effect transistor (FinFET) device structure, comprising:
- forming a stop layer over a substrate, wherein forming the stop layer includes forming one of SiOx or SiPOx;
- after forming the stop layer, forming a portion of a fin structure over the stop layer;
- forming an isolation structure over the substrate, wherein the isolation structure is adjacent to the stop layer;
- forming a dummy gate structure over the fin structure;
- etching a portion of the fin structure to form a recess over the substrate, wherein the recess is adjacent to the dummy gate structure, wherein the etching process depth is controlled by selectivity to the stop layer;
- and
- forming a source/drain (S/D) structure in the recess, wherein the S/D structure is located at a position that is higher than or level with a bottom surface of the stop layer.
A method for forming a fin field effect transistor (FinFET) device structure, comprising:
- forming a stop layer over a silicon substrate, wherein forming the stop layer includes forming at least one of SiOx or SiPOx;
- forming another silicon substrate over the stop layer;
- etching the another silicon substrate, the stop layer, and the silicon substrate to form a fin structure;
- forming an isolation structure over the silicon substrate, wherein the isolation structure is adjacent to the stop layer;
- forming a gate structure over the fin structure;
- removing a portion of the fin structure comprising the another silicon substrate to form a recess adjacent to the gate structure, wherein the recess exposes a top surface of a portion of the stop layer of the fin structure, wherein the exposed top surface is parallel a top surface of the isolation structure;
- and
- forming a source/drain (S/D) structure in the recess.
A method for forming a fin field effect transistor (FinFET) device structure, comprising:
- forming a fin structure, wherein the forming the fin structure includes:
- providing a first semiconductor region,
- depositing a stop layer over the first semiconductor region, wherein the stop layer includes a material consisting of one of SiOx, SiPOx, or SiGeOx,
- depositing a second semiconductor region over the stop layer, and
- patterning the first semiconductor region, the deposited stop layer, and the deposited second semiconductor region to form a fin-shape;
- forming a gate structure over a channel region of the fin structure;
- recessing the fin structure in a source region and a drain region of the fin structure while the gate structure is over the channel region, wherein the recessing includes etching using the stop layer as an etch stop and exposes a portion of the stop layer;
- and
- forming a source/drain (S/D) structure in the recess in the source region and the recess in the drain region, wherein the stop layer interfaces the S/D structure.
Dependencies are inferred from the claim text.