Semiconductor device

A semiconductor device, comprising:

• a first semiconductor region of a first conductivity type;
• a second semiconductor region of a second conductivity type on the first semiconductor region;
• a third semiconductor region of the first conductivity type on the second semiconductor region;
• a plurality of first electrodes extending inwardly of the first, second, and third semiconductor regions;
• a gate electrode surrounding at least one of the first electrodes and extending inwardly of the second semiconductor layer;
• a first conductive region overlying the third semiconductor region and portions of the first insulating layer, wherein the first conductive region includes a first opening therethrough overlying the gate electrode;
• a second conductive region overlying, and spaced from, the first conductive region;
• and
• a first conductive connection portion extending from the second conductive region through the first opening to the gate electrode.

A semiconductor device, comprising:

• a first semiconductor region of a first conductivity type;
• a second semiconductor region of a second conductivity type on the first semiconductor region;
• a third semiconductor region of the first conductivity type on the second semiconductor region;
• a first insulating portion extending inwardly of, and surrounded by, the first semiconductor region, the second semiconductor region, and the third semiconductor region;
• an annular gate electrode extending inwardly of the first insulating portion;
• a first electrode extending inwardly of the first insulating portion and surrounded by the first insulating portion and the annular gate electrode;
• a first metal layer on the third semiconductor region and the first insulating portion, and electrically connected to the third semiconductor region;
• a first insulating layer on the first metal layer;
• a second metal layer on the first insulating layer;
• a second insulating layer on the second metal layer;
• a third metal layer on the second insulating layer;
• and
• a first connection portion extending through the first insulating layer and an opening in the first metal layer to connect the second metal layer and the annular gate electrode.