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US 10,763,358 B2Granted
High voltage semiconductor device and method of manufacturing same
AssigneeDB HiTek Co., Ltd.
InventorJong Ho Lee
Life of this patent
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Abstract
Disclosed is a high voltage semiconductor device and a method of manufacturing the same.
Claims17
A high voltage semiconductor device comprising:
- a drift region on a first side of a substrate;
- a drain region in the drift region;
- a first-conductivity-type body region on a second side of the substrate, spaced apart from the drift region;
- a gate electrode on the substrate spaced apart from the drain region;
- a gate dielectric layer between the gate electrode and the substrate;
- and
- a source region in the body region;
- and
- a spacer on an outer sidewall of the gate electrode and not on an inner sidewall of the gate electrode,
- wherein the source region is a second-conductivity-type lightly doped region.
7 more elements
A high voltage semiconductor device comprising:
- a drift region on a first side of a substrate;
- a first-conductivity-type body region on a second side of the substrate spaced apart from the drift region by a predetermined distance;
- a gate electrode on a surface of the substrate over the drift region and a side or edge of the body region;
- a gate dielectric layer between the gate electrode and the substrate;
- and
- a lightly doped second-conductivity-type source region in the body region, wherein the source region and the body region are defined by a same photoresist mask.
3 more elements
A high voltage semiconductor device comprising:
- a drift region on a first side of a substrate;
- a first-conductivity-type body region on a second side of the substrate spaced apart from the drift region by a predetermined distance;
- a gate electrode on a surface of the substrate over the drift region and a side or edge of the body region;
- a gate dielectric layer between the gate electrode and the substrate;
- a second-conductivity-type lightly doped source region in the body region,
- defined by a same photoresist pattern as the body region;
- and
- a body contact region in contact with a side surface of the source region.
5 more elements
A method of manufacturing a high voltage semiconductor device, the method comprising:
- forming a drift region in a substrate;
- depositing a gate film on the substrate;
- forming a photoresist pattern on the gate film defining an outer sidewall of a gate electrode, and etching the gate film exposed by the photoresist pattern to form the outer sidewall of the gate electrode;
- forming a gate spacer on the outer sidewall of the gate electrode;
- etching the gate film at a position that is a predetermined distance from the outer sidewall of the gate electrode;
- and then
- forming a body region and a source region the predetermined distance spaced apart from the drift region by the predetermined distance.
4 more elements
A method of manufacturing a high voltage semiconductor device, the method comprising:
- forming a drift region in a substrate;
- depositing a gate film on the substrate;
- forming a source region and a body region using a same photoresist pattern a predetermined distance from the drift region and exposing a space between a pair of adjacent gate electrodes;
- forming a heavily doped drain region in the drift region;
- and
- forming a body contact region in the body region,
- wherein the body region is a first-conductivity-type doped region and the source region is a substantially uniform second-conductivity-type lightly doped region, and the source region contacts the body contact region and is below the pair of adjacent gate electrodes or partially overlaps with the pair of adjacent gate electrodes.
4 more elements
Dependencies are inferred from the claim text.