Manufacture of power devices having inversion channel
AssigneeGeneSiC Semiconductor Inc.
InventorsSiddarth Sundaresan, Ranbir Singh, Jaehoon Park, Stoyan Jeliazkov
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Abstract
An embodiment relates to a device comprising a unit cell on a SiC substrate, the unit cell comprising a first well region, a source region, a plug region, and a well trench, wherein the well trench has a depth that is less than that of the first well region. Additional embodiments relate to the device having a second well region, wherein the second well region has a depth that is equal to or deeper than the first well region and the second well region is located under and around the source region.
Claims19
A device comprising a unit cell on a SiC substrate, the unit cell comprising:
- a first well region,
- a source region,
- a plug region,
- a well trench, and
- a semiconductor channel comprising a first portion and a second portion;
- wherein the first portion is located on a horizontal crystal plane of the SiC substrate and the second is located on a vertical crystal plane of the SiC substrate, and wherein the well trench has a depth that is less than that of the first well region,
- wherein the source region located is within the first well region;
- and wherein the horizontal crystal plane comprises a 0001 crystal plane of the SiC substrate and the vertical crystal plane comprises a 11-20 or 10-10 crystal plane of the SiC substrate.
Dependencies are inferred from the claim text.