Semiconductor device, inverter circuit, driving device, vehicle, and elevator

A semiconductor device, comprising:

• a silicon carbide layer having a first plane and a second plane facing the first plane, the first plane and the second plane being parallel to a first direction and a second direction perpendicular to the first direction;
• a first electrode located on a side of the first plane of the silicon carbide layer;
• a second electrode located on a side of the second plane of the silicon carbide layer;
• a trench provided in the silicon carbide layer, the trench extending in the first direction on the first plane, and the trench having a first side plane, a second side plane, and a bottom plane between the first side plane and the second side plane;
• a gate electrode located in the trench;
• a gate insulating layer located between the gate electrode and the silicon carbide layer;
• a first silicon carbide region of n-type located in the silicon carbide layer;
• a second silicon carbide region of p-type located in the silicon carbide layer and located between the first silicon carbide region and the first plane;
• a third silicon carbide region of p-type located in the silicon carbide layer and between the first silicon carbide region and the first plane, the trench being interposed between the second silicon carbide region and the third silicon carbide region;
• a fourth silicon carbide region of n-type located in the silicon carbide layer and located between the second silicon carbide region and the first plane;
• a fifth silicon carbide region of n-type located in the silicon carbide layer and between the third silicon carbide region and the first plane, the trench being interposed between the fourth silicon carbide region and the fifth silicon carbide region;
• a sixth silicon carbide region of p-type located in the silicon carbide layer and between the first silicon carbide region and the second silicon carbide region, a distance between the second plane and the sixth silicon carbide region being smaller than a distance between the second plane and the bottom plane, and the first silicon carbide region being interposed between the first side plane and the sixth silicon carbide region;
• a seventh silicon carbide region of p-type located in the silicon carbide layer and between the first silicon carbide region and the third silicon carbide region, a distance between the second plane and the seventh silicon carbide region being smaller than the distance between the second plane and the bottom plane, and the first silicon carbide region being interposed between the second side plane and the seventh silicon carbide region;
• a eighth silicon carbide region of p-type located in the silicon carbide layer, the eighth silicon carbide region being provided between the first silicon carbide region and the sixth silicon carbide region, the eighth silicon carbide region being connected to the sixth silicon carbide region, and a distance between the second plane and the eighth silicon carbide region being smaller than the distance between the second plane and the bottom plane;
• and
• a ninth silicon carbide region of p-type located in the silicon carbide layer, the ninth silicon carbide region being provided between the first silicon carbide region and the seventh silicon carbide region, the ninth silicon carbide region being connected to the seventh silicon carbide region, and a distance between the second plane and the ninth silicon carbide region being smaller than the distance between the second plane and the bottom plane, wherein
• the eighth silicon carbide region has a plurality of first regions extending toward the ninth silicon carbide region, the first silicon carbide region being interposed between the ninth silicon carbide region and the first regions, and the first regions being repeatedly disposed in the first direction in a plane parallel to the first direction and the second direction.