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US 10,763,351 B2Granted
Vertical trench DMOSFET having integrated implants forming enhancement diodes in parallel with the body diode
AssigneeAlpha and Omega Semiconductor Incorporated
InventorsJi Pan, Anup Bhalla
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Abstract
Fabricating a semiconductor device comprises: forming a gate trench in an epitaxial layer overlaying a semiconductor substrate; depositing gate material in the gate trench; forming a body in the epitaxial layer; forming a source embedded in the body; forming a contact trench that extends through the source and at least part of the body; disposing an implant at least along a contact trench wall; and disposing an epitaxial enhancement portion below the contact trench and in contact with the implant.
Claims6
A method for fabricating a semiconductor device, comprising:
- forming a gate trench in an epitaxial layer overlaying a semiconductor substrate;
- depositing gate material in the gate trench;
- forming a body in the epitaxial layer;
- forming a source embedded in the body;
- forming a contact trench that extends through the source and at least part of the body;
- disposing an implant at least along a contact trench wall;
- and
- disposing an epitaxial enhancement portion below the contact trench and in contact with the implant, wherein:
- a bottom side of the epitaxial enhancement portion is disposed above a bottom side of the body;
- and
- the epitaxial enhancement portion is formed to have a same carrier type as the epitaxial layer;
- and
- the epitaxial enhancement portion is formed to have a higher carrier concentration than the epitaxial layer.
10 more elements
Dependencies are inferred from the claim text.