Back to results
US 10,763,340 B2Granted
Growing Groups III-V lateral nanowire channels
AssigneeInternational Business Machines Corporation
InventorsSanghoon Lee, Effendi Leobandung, Renee Mo, Brent A. Wacaser
Life of this patent
Estimating the term…
Abstract
In one example, a method for fabricating a semiconductor device includes forming a mandrel comprising silicon. Sidewalls of the silicon are orientated normal to the <111> direction of the silicon. A nanowire is grown directly on at least one of the sidewalls of the silicon and is formed from a material selected from Groups III-V. Only one end of the nanowire directly contacts the silicon.
Claims12
A semiconductor device, comprising:
- a mandrel comprising silicon;
- a nanowire formed from a material selected from Groups III-V that is grown directly on a sidewall of the mandrel, wherein a first end of the nanowire directly contacts the silicon of the mandrel and a second end of the nanowire avoids direct contact with silicon;
- and
- a metal gate positioned over a portion of the nanowire, wherein portions of the nanowire over which the metal gate is not positioned are modified by ion-implantation to create source and drain regions.
1 more element
Dependencies are inferred from the claim text.