Method for manufacturing a semiconductor device having a Schottky contact
AssigneeInfineon Technologies Austria AG
InventorsJens Peter Konrath, Ronny Kern, Stefan Krivec, Ulrich Schmid, Laura Stoeber
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Abstract
A semiconductor device includes an n-doped monocrystalline semiconductor substrate having a substrate surface, an amorphous n-doped semiconductor surface layer at the substrate surface of the n-doped monocrystalline semiconductor substrate, and a Schottky-junction forming material in contact with the amorphous n-doped semiconductor surface layer. The Schottky-junction forming material forms at least one Schottky contact with the amorphous n-doped semiconductor surface layer.
Claims18
A method for manufacturing a semiconductor device having at least one Schottky contact, the method comprising:
- providing a semiconductor substrate having a substrate surface;
- pre-treating the semiconductor substrate by subjecting the substrate surface to a capacitively coupled plasma, wherein power which is capacitively coupled into the plasma is in a range from 0 W to 80 W;
- wherein the capacitively coupled plasma is carried out for less than 120 s;
- and sputtering a Schottky-junction forming material directly on the pre-treated substrate surface to form a Schottky contact that forms a Schottky barrier at an interface between the Schottky-junction forming material and the semiconductor substrate.
A method for manufacturing a semiconductor device having at least one Schottky contact, the method comprising:
- providing a semiconductor substrate having a substrate surface;
- pre-treating the semiconductor substrate by subjecting the substrate surface to a capacitively coupled plasma for less than 120 s at a pressure of less than 0.11 Pa (0.8 mTorr);
- and
- sputtering a Schottky-junction forming material directly onto the pre-treated substrate surface to form a Schottky contact that forms a Schottky barrier at an interface between the Schottky-junction forming material and the pre-treated substrate surface.
Dependencies are inferred from the claim text.