Back to results
US 10,763,335 B2Granted
Semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsWonkeun Chung, Heonbok Lee, Chunghwan Shin, Youngsuk Chai, Sangjin Hyun
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a substrate having an active pattern therein, a gate electrode extending across the active pattern and a source/drain region on the active pattern laterally adjacent the gate electrode. The device further includes a contact structure including a first contact on the source/drain region, a second contact on the first contact and a spacer on sidewalls of the first and second contacts.
Claims17
A semiconductor device comprising:
- a substrate having an active pattern therein;
- a gate electrode extending across the active pattern;
- a source/drain region on the active pattern laterally adjacent the gate electrode;
- a contact structure comprising:
- a first contact on the source/drain region;
- a second contact on the first contact;
- a spacer on sidewalls of the first and second contacts and having an upper surface coplanar with an upper surface of the second contact;
- a wiring line electrically connected to the contact structure;
- and
- a via disposed between the contact structure and the wiring line and connecting the wiring line and the contact structure,
- wherein the first and second contacts are conductors.
8 more elements
A semiconductor device comprising:
- a substrate having an active pattern therein;
- a gate electrode extending across the active pattern;
- a source/drain region on the active pattern laterally adjacent the gate electrode;
- a gate contact electrically connected to the gate electrode;
- and
- a contact structure electrically connected to the source/drain region and comprising:
- a first contact on the source/drain regions;
- a second contact on the first contact;
- and
- a spacer on sidewalls of the first and second contacts,
- wherein an upper surface of the second contact is coplanar with an upper surface of the gate contact and wherein an upper surface of the first contact is lower than a lower surface of the gate contact,
- wherein the first contact comprises a conductive pattern and a barrier pattern interposed between the conductive pattern and the spacer and between the conductive pattern and the source/drain region, and
- wherein the gate contact, the first contact and the second contact are conductors.
10 more elements
A semiconductor device comprising:
- a substrate having an active pattern therein;
- a gate electrode longitudinally extending across the active pattern along a first direction;
- a source/drain region on the active pattern laterally adjacent the gate electrode;
- and
- a contact structure comprising:
- a first contact on the source/drain region;
- a second contact on the first contact and having a maximum width less than a maximum width of the first contact along the first direction;
- and
- an insulation layer on a sidewall of the first contact,
- wherein the first and second contacts are conductors, and
- wherein the contact structure further comprises a spacer on sidewalls of the first and second contacts and wherein the insulation layer is interposed between the second contact and the spacer.
8 more elements
Dependencies are inferred from the claim text.