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US 10,763,334 B2Granted
Drain and/or gate interconnect and finger structure
AssigneeCree, Inc.
InventorsFrank Trang, Zulhazmi Mokhti, Haedong Jang
Life of this patent
Estimating the term…
Abstract
Pursuant to some embodiments of the present invention, transistor devices are provided that include a semiconductor structure, a gate finger extending on the semiconductor structure in a first direction, and a gate interconnect extending in the first direction and configured to be coupled to a gate signal at an interior position of the gate interconnect, where the gate interconnect is connected to the gate finger at a position offset from the interior position of the gate interconnect.
Claims24
A transistor device, comprising:
- a semiconductor structure;
- a gate finger having a longitudinal axis extending on the semiconductor structure in a first direction;
- and
- a gate interconnect having a longitudinal axis extending in the first direction, the gate interconnect configured to be coupled to a gate signal at an interior position of the gate interconnect, wherein the gate interconnect is connected to the gate finger at a position offset from the interior position of the gate interconnect.
1 more element
A transistor device, comprising:
- a semiconductor structure;
- a gate finger extending on the semiconductor structure in a first direction;
- a gate interconnect extending in the first direction and configured to be coupled to a gate signal at an interior position of the gate interconnect, wherein the gate interconnect is connected to the gate finger at a position offset from the interior position of the gate interconnect;
- and
- a gate runner extending on the semiconductor structure in the first direction,
- wherein the gate interconnect has a first end and a second end, and
- wherein the gate interconnect is connected to the gate runner at the interior position of the gate interconnect that is remote from the first end and the second end of the gate interconnect.
4 more elements
A transistor device, comprising:
- a semiconductor structure;
- a gate finger extending on the semiconductor structure in a first direction;
- and
- a gate interconnect extending in the first direction and configured to be coupled to a gate signal at an interior position of the gate interconnect, wherein the gate interconnect is connected to the gate finger at a position offset from the interior position of the gate interconnect,
- wherein the gate finger comprises a first segment and a second segment with a gap therebetween.
2 more elements
A transistor device, comprising:
- a semiconductor structure;
- a gate finger extending on the semiconductor structure in a first direction;
- and
- a gate interconnect extending in the first direction and configured to be coupled to a gate signal at an interior position of the gate interconnect, wherein the gate interconnect is connected to the gate finger at a position offset from the interior position of the gate interconnect,
- wherein the position that is offset from the interior position of the gate interconnect is offset from the interior position of the gate interconnect by a first offset and offset from an edge of the gate finger by a second offset, and
- wherein the first offset is greater than the second offset.
3 more elements
A transistor device, comprising:
- a semiconductor structure;
- a drain finger extending on the semiconductor structure in a first direction;
- and
- a drain interconnect extending in the first direction and configured to be coupled to a drain signal at an interior position of the drain interconnect, wherein the drain interconnect is connected to the drain finger at a position offset from the interior position of the drain interconnect.
1 more element
A transistor device, comprising:
- a semiconductor structure;
- and
- a plurality of gate fingers and a plurality of drain fingers alternately arranged on the semiconductor structure, each extending in a first direction,
- wherein a gate finger of the plurality of gate fingers and a drain finger of the plurality of drain fingers comprise respective edge portions at opposite edges thereof with a central portion between the respective edge portions,
- wherein one of the gate finger or the drain finger has a plurality of conductive vias connected to the respective edge portions thereof and is free of a conductive via connected to the central portion, and
- wherein the other of the gate finger or the drain finger has at least one conductive via connected to the central portion thereof.
3 more elements
Dependencies are inferred from the claim text.