Semiconductor wafer and method of inspecting semiconductor wafer

A semiconductor wafer including a silicon wafer and a nitride crystal layer on the silicon wafer, wherein

• the nitride crystal layer includes a reaction suppressing layer configured to suppress reaction between a silicon atom and a Group-III atom, a stress generating layer configured to generate compressive stress and an active layer in which an electronic element is to be formed,
• the reaction suppressing layer, the stress generating layer and the active layer are arranged in an order of the reaction suppressing layer, the stress generating layer and the active layer with the reaction suppressing layer being positioned the closest to the silicon wafer, and
• the stress generating layer includes:
• a first crystal layer having a bulk crystal lattice constant of a1, wherein the first crystal layer has a thickness of more than 5.0 nm and less than 10 nm and the first crystal layer has a portion that contains carbon atoms at a concentration of 1×1018 cm−3 or less;
• and
• a second crystal layer in contact with a surface of the first crystal layer that faces the active layer, the second crystal layer having a bulk crystal lattice constant of a2 (a1<a2), wherein the second crystal layer has a portion that contains carbon atoms at a concentration of 5×1018 cm−3 or more, and
• wherein the stress generating layer includes a plurality of two-layer stack structures each of which is made up by the first crystal layer and the second crystal layer.