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US 10,763,331 B2Granted
Semiconductor device including ion implanted alignment marks and method of manufacturing the same
AssigneePanasonic Intellectual Property Management Co., Ltd.
InventorKouichi Saitou
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Abstract
A semiconductor device includes a bulk substrate, and an epitaxial layer formed on a surface of the bulk substrate. A part of the surface of the bulk substrate is an alignment region including an alignment pattern defined by at least one recess or one protrusion. An ion-injected layer is formed in at least a part of the alignment region.
Claims6
A semiconductor device comprising:
- a bulk substrate;
- and
- an epitaxial layer formed on a surface of the bulk substrate, wherein:
- a part of the surface of the bulk substrate is an alignment region including an alignment pattern defined by at least one recess or one protrusion,
- an ion-injected layer is formed in at least a part of the alignment region and contains at least one element of N and Al,
- the alignment region includes a plurality of protrusions and a plurality of recesses each defined by adjacent protrusions, and
- the ion-injected layer is formed on a top of each of the plurality of protrusions and a bottom of each of the plurality of recesses.
4 more elements
Dependencies are inferred from the claim text.