Epitaxial semiconductor material grown with enhanced local isotropy

A method comprising:

• epitaxially growing a first epitaxial layer having a first surface and a second surface inclined relative to the first surface;
• forming a surface layer on the first surface and the second surface of the first epitaxial layer;
• and
• after forming the surface layer, epitaxially growing a second epitaxial layer arranged over the surface layer on the first surface and the second surface of the first epitaxial layer,
• wherein a portion of the first epitaxial layer defines a first interface with the surface layer, the portion of the first epitaxial layer contains a first concentration of a dopant, and the surface layer contains a second concentration of the dopant that is greater than the first concentration of the dopant in the portion of the first epitaxial layer, the dopant is boron, the second concentration of the dopant includes a peak concentration at a second interface with the second epitaxial layer, the peak concentration ranges from 1×1021 cm−3 to 1×1022 cm−3, the second concentration of the dopant decreases from the peak concentration to a first minimum concentration at or near the first interface, and the first concentration of the dopant increases over a range of depths in the portion of the first epitaxial layer from the first interface.