Capacitor structure and method for manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorChih-Kuang Kao
Life of this patent
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Abstract
A capacitor structure includes an insulative layer, a first electrode over the insulative layer, a dielectric layer over the first electrode, and a second electrode over the dielectric layer. The first electrode includes a first portion extending along a lateral direction of the insulative layer and a second portion connected to the first portion and extending along a depth direction of the insulative layer. The dielectric layer is substantially conformal with respect to a profile of the first electrode. A semiconductor structure thereof and a method for forming the same are also provided.
Claims20
A capacitor structure, comprising:
- an insulative layer;
- a first electrode over the insulative layer, the first electrode including:
- a first portion extending along a lateral direction of the insulative layer;
- and
- a second portion connected to the first portion and extending along a depth direction of the insulative layer, wherein the second portion encircles the first portion from a top view perspective;
- a dielectric layer over the first electrode and substantially conformal with respect to a profile of the first electrode;
- and
- a second electrode over the dielectric layer.
A semiconductor structure, comprising:
- a first insulative layer having one or more first protrusions;
- a second insulative layer being over the first insulative layer, wherein the second insulative layer has one or more second protrusions engaged with the first protrusions of the first insulative layer;
- and
- a capacitor disposed between the first insulative layer and the second insulative layer, the capacitor comprising a plurality of electrodes and at least one dielectric layer, wherein the at least one dielectric layer is interposed between two adjacent electrodes of the plurality of electrodes, the two adjacent electrodes of the plurality of electrodes are electrically isolated from each other by the at least one dielectric layer, and the capacitor encircles the one or more second protrusions from a top view perspective.
A semiconductor structure, comprising:
- a substrate;
- one or more transistors, disposed over the substrate;
- an interconnect structure, disposed over the one or more transistors, and comprising a plurality of intermediate layers;
- and
- a capacitor structure, disposed in a first intermediate layer of the plurality of intermediate layers, and comprising:
- a first electrode, wriggly extending along an extending direction of the first intermediate layer;
- a second electrode, disposed over and being conformal to the first electrode;
- a first dielectric layer, disposed between the first electrode and the second electrode;
- a third electrode, disposed over the second electrode and being in contact with the first electrode;
- and
- a second dielectric layer, disposed between the third electrode and the second electrode.
Dependencies are inferred from the claim text.