Systems and methods for forming a thin film resistor integrated in an integrated circuit device

A method of forming an integrated thin film resistor (TFR) in a semiconductor integrated circuit device, the method comprising:

• forming an integrated circuit structure including at least one conductive contact;
• forming a first dielectric layer over the integrated circuit structure;
• forming a resistive film over a first portion of the first dielectric layer, but not over a second portion of the first dielectric layer;
• annealing the resistive film to reduce a temperature coefficient of resistance (TCR) of the resistive film;
• after the annealing the resistive film, forming a second dielectric layer including a first portion over and in contact with the resistive film and a second portion formed directly on the second portion of the first dielectric layer, such that the resistive film is arranged between the first dielectric layer and the first portion of the second dielectric layer, and such that the second portion of the first dielectric layer and the second portion of the second dielectric layer collectively define a combined dielectric thickness;
• forming an interconnect trench layer over the second dielectric layer;
• performing at least one etch process to define (a) at least one opening through the combined dielectric thickness of the second portion of the first dielectric layer and the second portion of the second dielectric layer to expose at least one surface of the at least one conductive contact and (b) at least one opening through the first portion of the second dielectric layer to expose at least one surface of the resistive film;
• and
• at least partially filling the openings with a conductive interconnect material to contact the exposed surfaces of the at least one conductive contact and the resistive film.