Organic light-emitting diode (OLED) image display apparatus driven by silicon-based complementary metal oxide semiconductor (CMOS) and manufacturing method

A manufacturing method for an organic light-emitting diode (OLED) image display apparatus driven by a silicon-based complementary metal oxide semiconductor (CMOS), the OLED image display apparatus driven by a silicon-based CMOS comprising four microdisplay units formed through exposure by using two bilaterally symmetrical masks:

• a first microdisplay unit, a second microdisplay unit, a third microdisplay unit, and a fourth microdisplay unit, wherein the first microdisplay unit and the second microdisplay unit are formed through exposure by using one of the two bilaterally symmetrical masks, and the third microdisplay unit and the fourth microdisplay unit are formed through exposure by using another of the two bilaterally symmetrical masks, wherein each microdisplay unit comprises:
• a display controller, a row driver, a column driver, and a rectangular display effective area, and wherein one of vertexes of each rectangular display effective area is close to each other to form one rectangular whole display effective area, there is no electronic component between any two rectangular display effective areas, and the rectangular display effective area is a rectangle;
• the manufacturing method comprising:
• moving a silicon chip to a first exposure field location, and forming, by an exposure system, the first microdisplay unit through exposure by using a first mask;
• moving the silicon chip to a second exposure field location, and forming, by the exposure system, the second microdisplay unit through exposure by using the first mask, wherein the second exposure field location rotates by 180° relative to the first microdisplay unit;
• moving the silicon chip to a third exposure field location, and forming, by the exposure system, the third microdisplay unit through exposure by using a second mask, wherein the second mask is bilaterally symmetrical to the first mask and the third microdisplay unit is bilaterally symmetrical to the second microdisplay unit;
• moving the silicon chip to a fourth exposure field location, and forming, by the exposure system, the fourth microdisplay unit through exposure by using the second mask, wherein the fourth exposure field location rotates by 180° relative to the third microdisplay unit.