Stackable cross-point phase-change material memory array with a resistive liner

A method of forming a phase change material memory array, comprising:

• forming a lower metallization layer on a substrate;
• forming a lower buffer layer on the lower metallization layer;
• forming a selector material layer on the lower buffer layer;
• forming a plurality of upright slabs, where each of the slabs includes an intermediate buffer segment on the selector material layer, a phase change material segment on the intermediate buffer segment, an upper buffer segment on the phase change material segment, and an upper conductive segment on the upper buffer segment;
• forming a resistive liner on the plurality of upright slabs;
• forming a sidewall spacer layer on the resistive liner;
• and
• removing the portions of the sidewall spacer layer and the resistive liner on the upper conductive segment, wherein another portion of the resistive liner remains on the phase change material segment.

A phase change material memory array, comprising:

• a lower metallization layer segment on a substrate;
• a plurality of upright columns, where each of the upright columns includes a lower buffer plate on the lower metallization layer segment, a phase change material block on the lower buffer plate, an upper buffer plate on the phase change material block, and an upper conductive plate on the upper buffer plate;
• an upper metallization layer segment on the upper buffer plate of a subset of the plurality of upright columns;
• a first pair of resistive liner segments on opposite sidewalls of each of the plurality of upright columns;
• a second pair of resistive liner segments on opposite sidewalls of each of the plurality of upright columns, wherein the second pair of resistive liner segments are arranged 90 degrees from the first pair of resistive liner segments;
• a pair of sidewall spacer layer segments on the first pair of resistive liner segments;
• and
• a fill layer with air gaps between the upright columns.