Resistive memory and method for fabricating the same and applications thereof

A method for fabricating a resistive memory device, comprising:

• providing a semiconductor substrate having a gate structure, a first doping region and a second doping region, wherein the gate structure is formed on a top surface of the semiconductor substrate;
• the first doping region and the second doping region are formed in the semiconductor substrate, adjacent to the gate structure and separated from each other;
• forming a dielectric layer on the top surface to cover on the first doping region and the second doping region;
• performing a first etching process to form a first through-hole in the dielectric layer, so as to expose a portion of the first doping region, meanwhile, to form a recess extending downwards into the first doping region from the top surface;
• forming an insulating layer in the first through-hole and the recess;
• forming a metal electrode layer on the insulating layer to make the metal electrode layer being isolated from the first doping region by the insulating layer;
• performing a second etching process to form a second through-hole in the dielectric layer to expose a portion of the second doping region;
• and
• forming a via plug electrically contacting to the second doping region in the second through-hole.