Semiconductor structure and method of forming the same

A semiconductor structure, comprising:

• a memory region, comprises:
• a first Nth metal line;
• a first stop layer being disposed over a top electrode of a magnetic tunneling junction (MTJ) over the first Nth metal line;
• a first (N+1)th metal via over the MTJ and surrounded by the first stop layer;
• and
• a cap positioned between the first stop layer and the top electrode;
• and
• a logic region adjacent to the memory region, the logic region comprises:
• a second Nth metal line;
• a second stop layer, disposed over an (N+1)th metal line;
• and
• a second (N+1)th metal via over the (N+1)th metal line;
• wherein N is an integer greater than or equal to 1, the first stop layer is non-coplanar with the second stop layer, and the first stop layer is not extended to the logic region.

A semiconductor structure, comprising:

• a memory region, comprises:
• a first Nth metal line;
• a magnetic tunneling junction (MTJ) over the first Nth metal line;
• a cap on the MTJ;
• a first stop layer being disposed over the cap;
• and
• a first (N+1)th metal via being disposed over the MTJ and surrounded by the first stop layer;
• and
• a logic region adjacent to the memory region, the logic region comprises:
• a second Nth metal line;
• a second stop layer being disposed over an (N+1)th metal line;
• and
• a second (N+1)th metal via over the (N+1)th metal line;
• wherein N is an integer greater than or equal to 1, and the first stop layer is not extended to the logic region.