Wide band gap device integrated circuit architecture on engineered substrate

A method of forming semiconductor devices, the method comprising:

• forming a wide band gap (WBG) epitaxial layer on an engineered substrate, wherein the WBG epitaxial layer includes a plurality of groups of epitaxial layers, and wherein the engineered substrate includes engineered layers formed on a bulk material, the bulk material having a coefficient of thermal expansion (CTE) matching a CTE of the WBG epitaxial layer;
• forming a first WBG device based on a first group of epitaxial layers among the plurality of groups of epitaxial layers by forming a first set of internal interconnects and a first set of electrodes;
• forming a second WBG device based on a second group of epitaxial layers among the plurality of groups of epitaxial layers by forming a second set of internal interconnects and a second set of electrodes;
• and
• forming one or more external interconnects between at least one of the first set of electrodes and at least one of the second set of electrodes.