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US 10,763,284 B1Granted
Silicon carbide integrated circuit including P-N junction photodiode
AssigneeCoolCAD Electronics, LLC
InventorsNeil Goldsman, Akin Akturk, Zeynep Dilli, Brendan Michael Cusack, Mitchell Adrian Gross
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Abstract
An integrated ultraviolet (UV) detector includes a silicon carbide (SiC) substrate, supporting metal oxide field effect transistors (MOSFETs), Schottky photodiodes, and PN Junction photodiodes. The MOSFET includes a first drain/source implant in the SiC substrate and a second drain/source implant in the SiC substrate. The Schottky photodiodes include another implant in the SiC substrate and a surface metal area configured to pass UV light.
Claims8
An integrated visible blind ultraviolet (UV) photodetector, comprising:
- a silicon carbide substrate that includes an N-type silicon carbide structure supporting a P-type silicon carbide epitaxial layer;
- a metal oxide field effect transistor (MOSFET), comprising:
- a first N+ drain/source implant in the P-type silicon carbide epitaxial layer;
- a second N+ drain/source implant in the P-type silicon carbide epitaxial layer, and
- a gate, on the silicon carbide substrate, between the first N+ drain/source implant and the second N+ drain/source implant;
- and
- a diode, coupled to the MOSFET, the diode comprising another implant in the silicon carbide substrate, and a surface area configured to pass UV light.
4 more elements
An apparatus, comprising:
- a silicon carbide substrate;
- and
- a side of a P-N junction ultraviolet (UV) detecting photodiode, supported by the silicon carbide substrate, wherein:
- the side of the P-N junction UV detecting photodiode includes a stepped implant, extending into the silicon carbide substrate, and
- the stepped implant includes a deep region and a less deep region, contiguous to the deep region, the deep region extending deeper into the silicon carbide substrate than the less deep region.
2 more elements
Dependencies are inferred from the claim text.