US 10,763,282 B2Granted

Semiconductor device

AssigneeSemiconductor Energy Laboratory Co., Ltd.

InventorsJunichi Koezuka, Masami Jintyou, Yukinori Shima, Daisuke Kurosaki, Masataka Nakada, Shunpei Yamazaki

Life of this patent

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Abstract

A semiconductor device including an oxide semiconductor in which on-state current is high is provided. The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. Furthermore, the first transistor and the second transistor are transistors having a top-gate structure. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. The first transistor provided in the driver circuit portion includes two gate electrodes between which the oxide semiconductor film is provided.

Claims18

Dependent claims

A semiconductor device comprising:

a first transistor over a substrate, the first transistor including:
a conductive film over the substrate;
a first insulating film over the conductive film;
a second insulating film on the first insulating film;
a first oxide semiconductor film on the second insulating film,
the first oxide semiconductor film overlapping with the conductive film;
a first gate insulating film on the first oxide semiconductor film;
a first gate electrode over the first gate insulating film;
and
a first source electrode and a first drain electrode over and in direct contact with the first oxide semiconductor film;
a second transistor over the substrate, the second transistor including:
a second oxide semiconductor film on the second insulating film;
a second gate insulating film on the second oxide semiconductor film;
a second gate electrode over the second gate insulating film;
and
a second source electrode and a second drain electrode over and in direct contact with the second oxide semiconductor film;
and
a third insulating film covering the first oxide semiconductor film, the first gate insulating film, the first gate electrode, the second oxide semiconductor film, the second gate insulating film, and the second gate electrode,
wherein the first source electrode, the first drain electrode, the second source electrode, and the second drain electrode comprise the same materials of the first gate electrode and the second gate electrode.

16 more elements

A semiconductor device comprising:

a first transistor over a substrate, the first transistor including:
a conductive film over the substrate;
a nitride insulating film over the conductive film;
an oxide insulating film on the nitride insulating film;
a first oxide semiconductor film on the oxide insulating film, the first oxide semiconductor film overlapping with the conductive film;
a first gate insulating film on the first oxide semiconductor film;
a first gate electrode over the first gate insulating film;
and
a first source electrode and a first drain electrode over and in direct contact with the first oxide semiconductor film;
a second transistor over the substrate, the second transistor including:
a second oxide semiconductor film on the oxide insulating film;
a second gate insulating film on the second oxide semiconductor film;
a second gate electrode over the second gate insulating film;
and
a second source electrode and a second drain electrode over and in direct contact with the second oxide semiconductor film;
and
an insulating film covering the first oxide semiconductor film, the first gate insulating film, the first gate electrode, the second oxide semiconductor film, the second gate insulating film, and the second gate electrode,
wherein the first source electrode, the first drain electrode, the second source electrode, and the second drain electrode comprise the same materials of the first gate electrode and the second gate electrode.

15 more elements

A semiconductor device comprising:

a first transistor over a substrate, the first transistor including:
a conductive film over the substrate;
a first insulating film over the conductive film;
a second insulating film on the first insulating film;
a first oxide semiconductor film on the second insulating film, the first oxide semiconductor film overlapping with the conductive film;
a first gate insulating film on the first oxide semiconductor film;
a first gate electrode over the first gate insulating film;
and
a first source electrode and a first drain electrode over and in direct contact with the first oxide semiconductor film;
a second transistor over the substrate, the second transistor including:
a second oxide semiconductor film on the second insulating film;
a second gate insulating film on the second oxide semiconductor film;
a second gate electrode over the second gate insulating film;
and
a second source electrode and a second drain electrode over and in direct contact with the second oxide semiconductor film;
and
a third insulating film covering the first oxide semiconductor film, the first gate insulating film, the first gate electrode, the second oxide semiconductor film, the second gate insulating film, and the second gate electrode,
wherein each of the first gate electrode and the second gate electrode has a two-layer structure, and
wherein the first source electrode, the first drain electrode, the second source electrode, and the second drain electrode comprise the same materials of the first gate electrode and the second gate electrode.

16 more elements

Dependencies are inferred from the claim text.

Facts

Application: 16/522,912Filed 26 Jul 2019 · continuation
Priority: JP 2014-0228647 Feb 2014
Published: US 2019/0355764 A121 Nov 2019
Granted: 1 Sep 2020
Term ends: Not estimatedThe source records don’t support an estimate.

Classification11 codes

H10D 86/60
Characterised by multiple TFTs: wherein the TFTs are in active matrices
H10D 30/6733
Characterised by the shapes, relative sizes or dispositions of the gate electrodes: multi-gate TFTs
H10D 30/6734
Multi-gate TFTs: having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
H10D 30/6755
Characterised by the active materials: oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate

Family

Application14/615,031Parent of this continuation · filed 5 Feb 2015
Application15/346,173Parent of this continuation · filed 8 Nov 2016
US 9,530,894 B2Parent of this continuation · filed 27 Dec 2016
Application15/845,692Parent of this continuation · filed 18 Dec 2017
US 9,847,358 B2Parent of this continuation · filed 19 Dec 2017
US 10,367,013 B2Parent of this continuation · filed 30 Jul 2019
US 2019/0355764 A1Pre-grant publication · published 21 Nov 2019
US 2015/0228799 A1Published application
US 2017/0053950 A1Published application
US 2018/0151603 A1Published application
US 10,763,282 B2This patent

From the US filing history. Foreign family members aren’t listed.