# US 10,763,280 B2 · Hybrid FinFET structure

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- Number: US 10,763,280 B2
- Document ID: US10763280B2
- Status: Granted
- Kind: B2
- Application number: 15/990,278
- Filed: 2018-05-25
- Published: 2019-01-03
- Granted: 2020-09-01
- Earliest claimed: 2017-05-31
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Co., Ltd.
- Inventors: Chien-Chen Liu; Guan-Jie Shen; Chia-Der Chang
- Web page: https://patentgrep.com/patent/US10763280B2

## CPC

- H10D 86/215: {comprising FinFETs}
- H10D 30/62: Fin field-effect transistors [FinFET]
- H10D 62/151: {of IGFETs (of IGFETs having LDD or DDD structure H10D30/601; of thin film transistors H10D30/6713)}
- H10D 84/0158: {the components including FinFETs}
- H10D 84/0193: {the components including FinFETs}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D 84/834: {comprising FinFETs}
- H10D 84/853: {comprising FinFETs}
- H10P 50/691: {for Group IV materials or Group III-V materials}
- H10P 50/695: {characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device includes a first fin field effect transistor (FinFET) device, the first FinFET device including a plurality of fins formed in a substrate, an epitaxial layer of semiconductor material formed on the fins forming non-planar source/drain regions, and a first gate structure traversing across the plurality of fins. The semiconductor device includes a second FinFET device, the second FinFET device including a substantially planar fin formed in the substrate, an epitaxial layer of the semiconductor material formed on the substantially planar fin and forming substantially planar source/drain regions, and a second gate structure traversing across the substantially planar fin.

## Claims

### Claim 1

A semiconductor device comprising:
a first fin field effect transistor (FinFET) device, the first FinFET device comprising a plurality of non-planar fins extending from a substrate, an epitaxial layer formed on the plurality of non-planar fins forming first source/drain regions, a first gate structure and a second gate structure, wherein the first gate structure and the second gate structure are configured to traverse across the plurality of non-planar fins; and
a second FinFET device, the second FinFET device comprising a planar fin extending from the substrate, wherein the epitaxial layer is formed on the planar fin to form second source/drain regions, and a third gate structure, wherein the third gate structure is configured to traverse across the planar fin,
wherein a first spacing between the first gate structure and the second gate structure is less than a second spacing between the second gate structure and the third gate structure.

### Claim 2 (depends on 1)

The semiconductor device of claim 1, further comprising:
a contact, wherein the contact is formed on the epitaxial layer formed over the planar fin between the fourth gate structure and the third gate structure.

### Claim 3 (depends on 1)

The semiconductor device of claim 1, wherein the planar fin has a first width in a direction parallel to the first gate structure, wherein the first width is greater than 100 nanometers, and wherein each of the plurality of non-planar fins has a second width in a direction parallel to the third gate structure, wherein the first width is greater than the second width.

### Claim 4 (depends on 1)

The semiconductor device of claim 1, wherein the epitaxial layer comprises at least one of the following: silicon phosphorous (SiP) and silicon germanium (SiGe).

### Claim 5 (depends on 1)

The semiconductor device of claim 1, wherein the second gate structure is in line with the third gate structure.

### Claim 6 (depends on 1)

The semiconductor device of claim 1, wherein the first gate structure is configured to traverse over the planar fin and spaced from the third gate structure and the fourth gate structure; and wherein the fourth gate structure is configured to traverse over the plurality of non-planar fins and spaced from the first gate structure and the second gate structure.

### Claim 7 (depends on 1)

The semiconductor device of claim 1, wherein the first FinFET device and second FinFET devices are formed in first and second active areas, respectively, that are separated by an oxide region.

### Claim 8 (depends on 7)

The semiconductor device of claim 7, wherein a part of the epitaxial layer formed on the planar fin of the second FinFET device extends over a part of the oxide region.

### Claim 9 (depends on 7)

The semiconductor device of claim 7, wherein an upper surface of the planar fin is lower than an upper surface of the plurality of non-planar fins.

### Claim 10 (depends on 1)

The semiconductor device of claim 1, wherein the plurality of non-planar fins of the first FinFET device are spaced from one another a distance that is less than a width of the planar fin of the second FinFET device.

### Claim 11

A semiconductor device comprising:
a first active area having a first fin field effect transistor (FinFET) device formed therein, the first FinFET device comprising a plurality of non-planar fins formed in a substrate, an epitaxial layer formed on the plurality of non-planar fins forming first source/drain regions, a first gate structure and a second gate structure, wherein the first gate structure and the second gate structure are configured to traverse across the plurality of non-planar fins;
a second active area having a second FinFET device formed therein, the second FinFET device comprising a planar fin formed in the substrate, wherein the epitaxial layer is formed on the planar fin to form second source/drain regions, and a third gate structure, wherein the third gate structure is configured to traverse across the planar fin, wherein a first spacing between the first gate structure and the second gate structure is less than a second spacing between the second gate structure and the third gate structure; and
a contact, the contact is formed on the epitaxial layer formed over the planar fin between the second gate structure and the third gate structure, wherein the epitaxial layer is silicon phosphorous (SiP).

### Claim 12 (depends on 11)

The semiconductor device of claim 11, wherein the first gate structure is configured to traverse over the planar fin and spaced from the third gate structure and the fourth gate structure; and wherein the fourth gate structure is configured to traverse over the plurality of non-planar fins and spaced from the first gate structure and the second gate structure.

### Claim 13 (depends on 11)

The semiconductor device of claim 11, wherein the planar fin has a first width in a direction parallel to the first gate structure, wherein the first width is greater than 100 nanometers, and wherein each of the plurality of non-planar fins has a second width in a direction parallel to the third gate structure, wherein the first width is greater than the second width.

### Claim 14

A semiconductor device comprising:
a first fin field effect transistor (FinFET) device, the first FinFET device comprising a plurality of non-planar fins extending from a substrate, an epitaxial layer formed on the plurality of non-planar fins forming first source/drain regions, a first gate structure and a second gate structure, wherein the first gate structure and the second gate structure are configured to traverse across the plurality of non-planar fins; and
a second FinFET device, the second FinFET device comprising a planar fin extending from the substrate, wherein the a first epitaxial layer is formed on the planar fin to form second source/drain regions, and a third gate structure, wherein the third gate structure is configured to traverse across the planar fin,
wherein a first bottom surface of an epitaxial layer formed on the planar fin of the second FinFET device is lower than a second bottom surface of an epitaxial layer formed on the plurality of non-planar finds of the first FinFET device,
wherein the planar fin has a first width in a direction parallel to the first gate structure, and wherein each of the plurality of non-planar fins has a second width in a direction parallel to the third gate structure, wherein the first width is greater than the second width.

### Claim 15 (depends on 14)

The semiconductor device of claim 14, further comprising:
a contact, wherein the contact is formed on the epitaxial layer formed over the planar fin between the fourth gate structure and the third gate structure.

### Claim 16 (depends on 14)

The semiconductor device of claim 14, further comprising a shallow trench isolation region having a step increase in height.

### Claim 17 (depends on 14)

The semiconductor device of claim 14, wherein the second gate structure is in line with the third gate structure.

### Claim 18 (depends on 14)

The semiconductor device of claim 14, wherein the first gate structure is configured to traverse over the-planar fin and spaced from the third gate structure and the fourth gate structure; and wherein fourth gate structure is configured to traverse over the plurality of non-planar fins and spaced from the first gate structure and the second gate structure.

### Claim 19 (depends on 14)

The semiconductor device of claim 14, wherein a part of the epitaxial layer formed on the planar fin of the second FinFET device extends over a part of a oxide region.