Non-volatile memory device having at least one metal and one semiconductor body extending through the electrode stack

A non-volatile memory device comprising:

• a substrate;
• an insulation film provided above the substrate;
• a first conductive layer provided above the insulation film;
• an upper interconnect structure including a first interconnection;
• electrodes provided between the first conductive layer and the upper interconnect structure, the electrodes being arranged in a first direction perpendicular to the first conductive layer to constitute a stacked structure and functioning control gates for memory cells;
• at least one semiconductor body extending through the electrodes in the first direction and having a circular shape in a cross section orthogonal to the first direction, one end of the semiconductor body being electrically connected to the first conductive layer, and the other end of the semiconductor body being electrically connected to the first interconnection;
• a core film provided inside the circular shape semiconductor body;
• and
• a conductive body extending in the first direction between the first conductive layer and the upper interconnect structure and being electrically connected to the first conductive layer,
• the conductive body including a metal portion embedded in a slit extending in a second direction orthogonal to the first direction and positioned at a same level in the first direction as the stacked structure of the electrodes, an outer diameter of the circular shape semiconductor body being smaller than a width of the metal portion of the conductive body at a same level in the first direction, the width being along a third direction orthogonal to the first direction and the second direction.