Three-dimensional memory device having a shielding layer and method for forming the same
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsZongliang Huo, Li Hong Xiao
Life of this patent
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Abstract
Embodiments of three-dimensional (3D) memory devices having a shielding layer and methods for forming the 3D memory devices are disclosed. In an example, a 3D memory device includes a substrate, a peripheral device disposed on the substrate, a semiconductor layer disposed above the peripheral device, a plurality of memory strings each extending vertically on the semiconductor layer, and a shielding layer disposed between the peripheral device and the semiconductor layer. The shielding layer includes a conduction region configured to receive a grounding voltage during operation of the 3D memory device.
Claims30
A three-dimensional (3D) memory device, comprising:
- a substrate;
- a peripheral device disposed on the substrate;
- a semiconductor layer disposed above the peripheral device;
- a plurality of memory strings each extending vertically on the semiconductor layer;
- a shielding layer disposed between the peripheral device and the semiconductor layer, wherein the shielding layer comprises a conduction region and an isolation region;
- a first interconnect layer between the shielding layer and the semiconductor layer;
- and
- a first contact extending through the isolation region of the shielding layer and configured to provide an electrical connection between the peripheral device and at least one of the plurality of memory strings.
A three-dimensional (3D) memory device, comprising:
- a substrate;
- a plurality of memory strings each extending vertically on the substrate;
- a semiconductor layer disposed above the plurality of memory strings;
- a peripheral device disposed on the semiconductor layer;
- a shielding layer disposed between the plurality of memory strings and the semiconductor layer, wherein the shielding layer comprises a conduction region and an isolation region;
- a first interconnect layer between the shielding layer and the semiconductor layer;
- and
- a first contact extending through the isolation region of the shielding layer and configured to provide an electrical connection between the peripheral device and at least one of the plurality of memory strings.
Dependencies are inferred from the claim text.