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US 10,763,265 B2Granted
Integrated assemblies having continuous high-dielectric films extending across channel regions of adjacent transistors
AssigneeMicron Technology, Inc.
InventorsTakuya Imamoto, Takeshi Nagai, Yoichi Fukushima
Life of this patent
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Abstract
Some embodiments include an integrated assembly having a first transistor adjacent to a second transistor. The first transistor has a first conductive gate material over a first insulative region, and the second transistor has a second conductive gate material over a second insulative region. A continuous high-k dielectric film extends across both of the first and second insulative regions. In some embodiments, the transistors may be incorporated into a sense amplifier.
Claims15
An integrated assembly, comprising:
- a continuous layer of high-k dielectric material;
- a first transistor having a first transistor gate over a first portion of the continuous layer;
- the first transistor gate having a first lateral periphery;
- a second transistor having a second transistor gate over a second portion of the continuous layer;
- the second transistor gate having a second lateral periphery;
- and
- wherein:
- a first insulative material surrounds the first and second lateral peripheries and is on segments of the continuous layer;
- the first and second lateral peripheries comprise inner portions which are laterally between the first and second transistor gates, and comprise outer portions which are not laterally between the first and second transistor gates;
- and
- a second insulative material is along the outer portions of the first and second lateral peripheries and is not along the inner portions of the first and second lateral peripheries;
- the second insulative material being compositionally different from both the first insulative material and the high-k dielectric material.
9 more elements
An integrated assembly, comprising:
- a set of four transistors;
- said set including a first pair of transistors and a second pair of transistors;
- the first pair of transistors being laterally disposed from the second pair of transistors across a first axis;
- the transistors of the first pair being an A transistor and a B transistor;
- the B transistor being laterally disposed from the A transistor across a second axis which is substantially orthogonal to the first axis;
- the transistors of the second pair being an A′ transistor and a B′ transistor;
- the B′ transistor being laterally disposed from the A′ transistor across the second axis;
- the A, B, A′ and B′ transistors having first, second, third and fourth transistor gates, respectively;
- the A, B, A′ and B′ transistors having first, second, third and channel regions, respectively;
- the first channel region being beneath the first transistor gate, the second channel region being beneath the second transistor gate, the third channel region being beneath the third transistor gate, and the fourth channel region being beneath the fourth transistor gate;
- a first high-k dielectric film extending across both the first and second channel regions and being disposed between the first and second transistor gates and the first and second channel regions;
- and
- a second high-k dielectric film extending across both the third and fourth channel regions and being disposed between the third and fourth transistor gates and the third and fourth channel regions.
10 more elements
Dependencies are inferred from the claim text.