# US 10,763,263 B2 · Semiconductor device having equivalent series resistance unit > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,763,263 B2 - Document ID: US10763263B2 - Status: Granted - Kind: B2 - Application number: 16/262,700 - Filed: 2019-01-30 - Published: 2020-07-30 - Granted: 2020-09-01 - Earliest claimed: 2019-01-30 - Assignees: Micron Technology, Inc. - Applicants: Micron Technology, Inc. - Inventors: Ken Ota - Web page: https://patentgrep.com/patent/US10763263B2 ## CPC - H10B 12/50: {Peripheral circuit region structures} - H10B 12/30: {DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells} - H10W 20/43: Layouts of interconnections - H10W 20/4441: {the principal metal being a refractory metal} - H10W 20/496: {Capacitor integral with wiring layers} - H10W 20/498: {Resistive arrangements or effects of, or between, wiring layers} - H10B: ELECTRONIC MEMORY DEVICES - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract Disclosed herein is an apparatus that includes: a first conductive layer having a first common pattern and a plurality of first branch patterns arranged in a first direction, one end of each of the first branch patterns being connected to the first common pattern; a second conductive layer having a second common pattern and a plurality of second branch patterns arranged in the first direction, one end of at least one of the second branch patterns being connected to the second common pattern; an insulating layer formed between the first and second conductive layers; and a plurality of via electrodes penetrating through the insulating layer, other end of each of the first branch patterns being connected to an associated one of other end of each of the second branch patterns. ## Claims ### Claim 1 An apparatus comprising: a first conductive layer having a first common pattern and a plurality of first branch patterns arranged in a first direction, one end of each of the first branch patterns being connected to the first common pattern; a second conductive layer having a second common pattern and a plurality of second branch patterns arranged in the first direction, one end of at least one of the second branch patterns being disconnected from the second common pattern; an insulating layer formed between the first and second conductive layers; and a plurality of via electrodes penetrating through the insulating layer, another end of each of the first branch patterns being connected to an associated one of another end of each of the second branch patterns. ### Claim 2 (depends on 1) The apparatus of claim 1, wherein the one ends of some of the second branch patterns are connected to the second common pattern, and the one ends of remaining second branch patterns are disconnected from the second common pattern. ### Claim 3 (depends on 2) The apparatus of claim 2, wherein the second branch patterns that are connected to the second common pattern are regularly arranged in the first direction. ### Claim 4 (depends on 3) The apparatus of claim 3, wherein at least one of the second branch patterns that is connected to the second common pattern and at least one of the second branch patterns that is disconnected from the second common pattern are alternately arranged in the first direction. ### Claim 5 (depends on 1) The apparatus of claim 1, wherein each of the first branch patterns extends in a second direction substantially perpendicular to the first direction. ### Claim 6 (depends on 1) The apparatus of claim 1, wherein each of the first branch patterns has a meandering shape. ### Claim 7 (depends on 2) The apparatus of claim 2, further comprising a plurality of capacitor elements connected in common to the first common pattern. ### Claim 8 (depends on 7) The apparatus of claim 7, further comprising a plurality of memory cells each having a cell transistor and a cell capacitor, wherein each of the capacitor elements has substantially the same structure as the cell capacitor. ### Claim 9 (depends on 8) The apparatus of claim 8, wherein the capacitor elements and the memory cells are located in a first area, wherein the via electrodes are located in a second area, and wherein each of the first and second branch patterns is partially located in a third area between the first and second areas. ### Claim 10 (depends on 9) The apparatus of claim 9, wherein the third area is free from any via electrodes. ### Claim 11 (depends on 10) The apparatus of claim 10, wherein the remaining second branch patterns are disconnected in the third area. ### Claim 12 (depends on 9) The apparatus of claim 9, wherein each of the second branch patterns overlaps with an associated one of the first branch patterns in the third area. ### Claim 13 (depends on 12) The apparatus of claim 12, wherein the second common pattern overlaps with the first common pattern in the first area. ### Claim 14 (depends on 1) The apparatus of claim 1, further comprising an internal voltage generator that generates an internal voltage based on an external voltage supplied from outside, wherein one of the first and second common patterns is supplied with the internal voltage. ### Claim 15 (depends on 1) The apparatus of claim 1, wherein the first conductive layer comprises a first conductive material, and the second conductive layer comprises a second conductive material different from the first conductive material. ### Claim 16 (depends on 15) The apparatus of claim 15, wherein the first conductive material is greater in resistivity than the second conductive material. ### Claim 17 (depends on 16) The apparatus of claim 16, wherein the first conductive material is a refractory metal. ### Claim 18 (depends on 17) The apparatus of claim 17, wherein the first conductive material includes tungsten. ### Claim 19 An apparatus comprising: a plurality of first branch patterns; a plurality of second branch patterns each overlaps with and connected to an associated one of the plurality of first branch patterns, the second branch patterns being divided into first and second groups; a first common pattern connected in common to the plurality of first branch patterns; and a second common pattern connected in common to the second branch patterns belonging to the first group without being connected to the second branch patterns belonging to the second group.