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US 10,763,260 B2Granted
Semiconductor device and method of manufacturing a semiconductor device
AssigneesUnited Microelectronics Corp., Fujian Jinhua Integrated Circuit Co., Ltd.
InventorsChien-Ting Ho, Shih-Fang Tzou, Chun-Yuan Wu, Li-Wei Feng, Yu-Chieh Lin, Ying-Chiao Wang, Tsung-Ying Tsai
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Abstract
A semiconductor device includes a memory region, a plurality of bit lines in the memory region, a first low-k dielectric layer on each sidewall of each bit line, a plurality of storage node regions between the bit lines, and a second low-k dielectric layer surrounding each storage node region.
Claims9
A semiconductor device, comprising:
- a memory region;
- a plurality of bit lines in said memory region;
- trenches at two sides of each said bit line;
- a first low-k dielectric layer on each sidewall of each said bit line;
- a plurality of storage node regions between said bit lines;
- a second low-k dielectric layer surrounding each said storage node region;
- and
- a first spacer layer conformally on said trench and said bit line and a second spacer layer filling up said trench on said first spacer layer, wherein said first low-k dielectric layer is on said first spacer layer on said sidewall of said bit line.
5 more elements
Dependencies are inferred from the claim text.