Semiconductor device

A semiconductor device, comprising:

• a semiconductor substrate including
• a first element region for forming an insulated gate bipolar transistor therein, and
• a second element region for forming a diode therein,
• the semiconductor substrate constituting a drift layer;
• and
• a plurality of trench structures formed on the semiconductor substrate, including
• a plurality of gate trench structures provided on a front surface side of the first element region, each gate trench structure having an electrode provided therein that is based on a gate potential,
• a plurality of emitter trench structures provided on the front surface side of the first element region, each emitter trench structure having an electrode provided therein that is based on an emitter potential, and
• a plurality of floating trench structures provided at least on a front surface side of the second element region, each floating trench structure having an electrode provided therein that has a floating potential, the floating trench structures being larger in number in the second element region than in the first element region, wherein
• the plurality of floating trench structures are provided on the second element region only, and
• the plurality of emitter trench structures are not provided on the second element region.