# US 10,763,245 B2 · Optoelectronic component with a first potting material covering parts of a first optoelectronic semiconductor chip and a second potting material covering the first potting material

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- Number: US 10,763,245 B2
- Document ID: US10763245B2
- Status: Granted
- Kind: B2
- Application number: 15/719,810
- Filed: 2017-09-29
- Published: 2018-04-12
- Granted: 2020-09-01
- Earliest claimed: 2016-10-06
- Assignees: OSRAM OLED GmbH
- Applicants: OSRAM OLED GmbH
- Inventors: Luca Haiberger; Matthias Sperl
- Web page: https://patentgrep.com/patent/US10763245B2

## CPC

- H10W 90/00: Package configurations
- H10H 20/853: characterised by their shape
- H10H 20/855: Optical field-shaping means, e.g. lenses
- H10H 20/856: Reflecting means
- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H10W 74/121: {by multiple encapsulations, e.g. by a thin protective coating and a thick encapsulation}
- H10H 20/0362: {of encapsulations}
- H10H 20/0363: {of optical field-shaping means}
- H10H 20/824: comprising only Group III-V materials, e.g. GaP
- H10H 20/852: Encapsulations
- H10W 72/884: {Die-attach connectors and bond wires}
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

An optoelectronic component includes a carrier, wherein a first optoelectronic semiconductor chip and a second optoelectronic semiconductor chip are arranged above a top side of the carrier, the optoelectronic semiconductor chips each include a top side, an underside situated opposite the top side, and side faces extending between the top side and the underside, the undersides of the optoelectronic semiconductor chips face the top side of the carrier, a first potting material is arranged above the top side of the carrier, the first potting material covering parts of the side faces of the first optoelectronic semiconductor chip, and a second potting material is arranged above the top side of the carrier, and the second potting material covering the first potting material.

## Claims

### Claim 1

An optoelectronic component comprising:
a carrier;
a first optoelectronic semiconductor chip that is a volume emitting light-emitting diode chip and has a top side, and a second optoelectronic semiconductor chip that is a surface emitting light-emitting diode chip and a top side of the second optoelectronic semiconductor chip is a radiation emission side arranged above a top side of the carrier, wherein the optoelectronic semiconductor chips each comprise an underside situated opposite the top side and side faces extending between the top side and the underside, and the undersides of the optoelectronic semiconductor chips face the top side of the carrier;
a first potting material arranged above the top side of the carrier, said first potting material covering parts of the side faces of the first optoelectronic semiconductor chip, wherein the side faces of the second optoelectronic semiconductor chip are not covered by the first potting material; and
a second potting material arranged above the top side of the carrier, and said second potting material covering the first potting material, wherein the second potting material terminates flush with the top sides of the first optoelectronic semiconductor chip and the second optoelectronic semiconductor chip.

### Claim 2 (depends on 1)

The optoelectronic component according to claim 1, wherein the second potting material covers at least parts of the side faces of the second optoelectronic semiconductor chip.

### Claim 3 (depends on 1)

The optoelectronic component according to claim 1, wherein the first optoelectronic semiconductor chip is configured as a volume emitting sapphire light-emitting diode chip.

### Claim 4 (depends on 1)

The optoelectronic component according to claim 1, wherein the second optoelectronic semiconductor chip is configured as an InGaAlP light-emitting diode chip.

### Claim 5 (depends on 1)

The optoelectronic component according to claim 1, wherein the first potting material is light-reflecting.

### Claim 6 (depends on 1)

The optoelectronic component according to claim 1, wherein the second potting material is light-absorbing.

### Claim 7 (depends on 1)

The optoelectronic component according to claim 1, wherein the carrier is configured as a circuit board.

### Claim 8 (depends on 1)

The optoelectronic component according to claim 1, wherein the first optoelectronic semiconductor chip and the second optoelectronic semiconductor chip are attached to the top side of the carrier by an adhesive, a silver conductive adhesive or a white adhesive.

### Claim 9 (depends on 1)

The optoelectronic component according to claim 1,
wherein a third optoelectronic semiconductor chip comprising a top side, an underside situated opposite the top side, and side faces extending between the top side and the underside, is arranged above the top side of the carrier,
the underside of the third optoelectronic semiconductor chip faces the top side of the carrier, and
the first potting material covers parts of the side faces of the third optoelectronic semiconductor chip.

### Claim 10 (depends on 9)

The optoelectronic component according to claim 9, wherein the third optoelectronic semiconductor chip is configured as a volume emitting light-emitting diode chip, or a volume emitting sapphire light-emitting diode chip.