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US 10,763,242 B2Granted
Semiconductor package and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsYoung-Hoon Son, Jung-Hwan Choi, Seok-Hun Hyun
Life of this patent
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Abstract
A semiconductor package includes a first layer of one or more first semiconductor chips each having a first surface at which one or more first pads are exposed, a second layer of one or more second semiconductor chips disposed over the first layer and each having a second surface at which one or more second pads are exposed, and a first redistribution layer between the first layer and the second layer and electrically connected to the one or more first pads. The first layer may include one or more first TPVs extending through a substrate (panel) of the first layer and electrically connected to the first redistribution layer.
Claims13
A semiconductor package comprising:
- a first layer comprising a first panel of the semiconductor package and one or more first semiconductor chips, each of the one or more first semiconductor chips having one or more first pads exposed at a first surface of the one or more first semiconductor chips;
- a second layer disposed over the first layer, the second layer comprising a second panel of the semiconductor package and one or more second semiconductor chips, each of the one or more second semiconductor chips having one or more second pads exposed at a second surface of the one or more second semiconductor chips;
- and
- a first redistribution layer interposed between the first layer and the second layer and electrically connected to the one or more first pads,
- wherein the first layer further comprises one or more first through panel vias (TPVs) extending through the first panel in a vertical direction, corresponding, to a direction of thickness of the first panel, and electrically connected to the first redistribution layer, and
- wherein the one or more first semiconductor chips and the one or more second semiconductor chips are disposed such that the first surface and the second surface face each other across the first redistribution layer, and
- the one or more second pads are electrically connected to the first redistribution layer,
- wherein the first layer further comprises one or more through silicon vias (TSVs) extending in the vertical direction from the one or more first pads through a remainder of respective ones of the one or more first semiconductor chips.
5 more elements
A semiconductor package comprising:
- a first layer comprising a first semiconductor chip having one or more first pads exposed at a first surface of the first semiconductor chip, a first panel having a first accommodating portion accommodating the first semiconductor chip, and one or more first through panel vias (TPVs) extending through the first panel in a vertical direction corresponding to a direction of thickness of the first panel;
- a first redistribution layer disposed on the first layer in the vertical direction and electrically connected to the one or more first pads and the one or more first TPVs;
- and
- a second layer stacked in the vertical direction on the first redistribution layer and including a second semiconductor chip having one or more second pads exposed at a second surface of the second semiconductor chip, and a second panel including a second accommodating portion accommodating the second semiconductor chip,
- wherein the first accommodating portion and the second accommodating portion are disposed symmetrically with respect to the first redistribution layer, and
- the one or more second pads are electrically connected to the first redistribution layer.
3 more elements
A semiconductor package comprising:
- a first panel having one or more chip accommodating portions therein extending through the first panel;
- first semiconductor chips respectively received in each of the one or more chip accommodating portions of the first panel;
- a redistribution layer (RDL) comprising a wiring pattern extending along a first side of the first panel and over the first semiconductor chips, the wiring pattern of the RDL being electrically connected to the first semiconductor chips;
- a first through panel via (TPV) extending vertically through the first panel, the wiring pattern of the RDL extending over and electrically connected to the first TPV;
- a second panel disposed directly on a second side of the first panel that is opposite the first side of the first panel, the second panel having one or more chip accommodating portions extending through the second panel;
- second semiconductor chips respectively received in each of the one or more chip accommodating portions of the second panel;
- and
- one or more through silicon vias (TSVs) electrically connected to the wiring pattern of the RDL,
- wherein each of the one or more TSVs extends through and each is electrically connected to respective different pairs of a first semiconductor chip from among the first semiconductor chips and a second semiconductor chip from among the second semiconductor chips.
6 more elements
Dependencies are inferred from the claim text.