Semiconductor device structure having semiconductor die bonded to redistribution layer via electrical pad with barrier layer
AssigneeAdvanced Semicomductor Engineering, Inc.
InventorsMing Hsien Chu, Chi-Yu Wang
Life of this patent
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Abstract
A wiring structure includes a redistribution layer and an electrical pad. The redistribution layer includes a passivation layer and a metal layer. The metal layer is embedded in the passivation layer, and the passivation layer defines an opening to expose a portion of the metal layer. The electrical pad is disposed in the opening of the passivation layer and on the metal layer. The electrical pad includes a seed layer, a conductive layer, a barrier layer and an anti-oxidation layer.
Claims15
A semiconductor device structure, comprising:
- a first redistribution layer;
- an electrical pad disposed on the first redistribution layer, wherein the electrical pad comprises a conductive layer and a barrier layer, and further comprises an oxide layer disposed adjacent to a lateral surface of the electrical pad, wherein the oxide layer is formed by oxidation of a peripheral region of the electrical pad;
- a semiconductor die disposed on the first redistribution layer and electrically connecting to the electrical pad;
- at least one first conductive post disposed on the first redistribution layer and adjacent to the semiconductor die;
- and
- an encapsulant covering the semiconductor die and the first conductive post.
A method for manufacturing a semiconductor device structure, comprising:
- (a) forming a first redistribution layer;
- (b) forming an electrical pad on the first redistribution layer, wherein the electrical pad comprises a conductive layer, a barrier layer and an anti-oxidation layer;
- (c0) forming a photoresist layer on the electrical pad and defining at least one through hole;
- (c) forming at least one conductive post on the first redistribution layer and in the through hole of the photoresist layer;
- (c1) removing the photoresist layer, and forming an oxide layer adjacent to a lateral surface of the electrical pad, wherein the oxide layer is formed by oxidation of a peripheral region of the electrical pad;
- (d) disposing a semiconductor die on the first redistribution layer and electrically connecting the semiconductor die to the electrical pad;
- and
- (e) forming an encapsulant to cover the semiconductor die and the conductive post.
Dependencies are inferred from the claim text.