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US 10,763,228 B2Granted
Compensation device for transistors
AssigneeInfineon Technologies AG
InventorsDavid Seebacher, Andrea Del Chiaro, Peter Singerl, Ji Zhao
Life of this patent
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Abstract
Devices including a transistor having a parasitic capacitance between a control terminal and a load terminal of a first type are provided. Furthermore, the devices include advantageously arranged inductances which are electromagnetically coupled to one another and are configured at least partly to compensate for an effect of the parasitic capacitance in a range around a resonant frequency.
Claims6
A device, comprising:
- a transistor having a control terminal, a load terminal of a first type and a load terminal of a second type,
- wherein the transistor has a parasitic capacitance between the control terminal and the load terminal of the first type, a first inductance conductively connected to the control terminal, and a second inductance conductively connected to the load terminal of the first type,
- wherein the first inductance is electromagnetically coupled to the second inductance,
- wherein the first inductance, the second inductance and the electromagnetic coupling are configured at least partly to compensate for an effect of the parasitic capacitance in a range around a resonant frequency.
1 more element
Dependencies are inferred from the claim text.