Monolithic 3D integration inter-tier vias insertion scheme and associated layout structure

A method, comprising:

• forming a first interconnect structure over a first substrate, wherein the first interconnect structure includes a plurality of first interconnect elements;
• depositing a second substrate over the first substrate such that the first interconnect structure is disposed between the first substrate and the second substrate;
• forming a first circuit cell and a second circuit cell in the second substrate, wherein the first circuit cell and the second circuit cell are separated by an empty cell that is free of containing doped regions or functional transistors therein;
• forming a via that extends through the empty cell but does not extend into the first circuit cell or the second circuit cell, wherein the via is formed to be electrically coupled to the first interconnect structure;
• and
• forming a second interconnect structure over the second substrate, wherein the second interconnect structure includes a plurality of second interconnect elements, and wherein at least one of the second interconnect elements is formed to be in direct physical contact with a second end of the via.

A method, comprising:

• forming a first interconnect structure over a first substrate, wherein the first interconnect structure includes a plurality of first interconnect elements;
• depositing a second substrate over the first substrate such that the first interconnect structure is disposed between the first substrate and the second substrate;
• forming a first circuit cell and a second circuit cell in the second substrate, wherein the first circuit cell and the second circuit cell are separated by an empty cell;
• forming a via that extends through the empty cell but does not extend into the first circuit cell or the second circuit cell, wherein the via is formed to be electrically coupled to the first interconnect structure;
• forming a second interconnect structure over the second substrate, wherein the second interconnect structure includes a plurality of second interconnect elements, wherein a first end of the via is in direct physical contact with one of the first interconnect elements, and wherein a second end of the via is in direct physical contact with one of the second interconnect elements;
• wherein the forming the via is performed such that:
• the via is elongated in a first direction in a top view;
• and
• the first interconnect element or the second interconnect element that is in direct physical contact with the via is elongated in a second direction in the top view, wherein the first direction is different from the second direction.