Semiconductor device structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing-Heng Tsai, Chun-Sheng Liang, Pei-Lin Wu, Yi-Ren Chen, Shih-Hsun Chang
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Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a gate stack over the substrate. The gate stack has a first upper portion and a first lower portion, and the first upper portion is wider than the first lower portion. The semiconductor device structure includes a spacer layer surrounding the gate stack. The spacer layer has a second upper portion and a second lower portion. The second upper portion is thinner than the second lower portion.
Claims20
A semiconductor device structure, comprising:
- a substrate;
- a gate stack over the substrate, wherein the gate stack has a first portion and a second portion under the first portion, and the first portion is wider than the second portion;
- a first spacer and a second spacer over opposite sides of the gate stack, wherein the first spacer has a first upper portion and a first lower portion, the second spacer has a second upper portion and a second lower portion, a first distance between the first upper portion and the second upper portion is greater than a second distance between the first lower portion and the second lower portion, the first spacer has a recess, the first upper portion is between the recess and the gate stack, and the first lower portion is under the recess;
- and
- an etch stop layer conformally covering a first inner wall and a second inner wall of the recess and extending onto the substrate, wherein the first inner wall faces away from the gate stack, and the second inner wall faces away from the substrate.
A semiconductor device structure, comprising:
- a substrate comprising a fin structure;
- a first gate stack over the fin structure;
- a first spacer layer surrounding the first gate stack, wherein the first spacer layer has a first upper portion and a first lower portion, the first upper portion is thinner than the first lower portion, and the first spacer layer has a recess between the first upper portion and the first lower portion and recessing toward the first gate stack;
- a second gate stack over the fin structure;
- a second spacer layer surrounding the second gate stack, wherein the second spacer layer has a second upper portion and a second lower portion, the second upper portion is thinner than the second lower portion, and a first length of the first lower portion is greater than a second length of the second lower portion;
- a third gate stack over the fin structure;
- and
- a third spacer layer surrounding the third gate stack, wherein the third spacer layer has a third upper portion and a third lower portion, the third upper portion is thinner than the third lower portion, a third length of the third lower portion is greater than the second length of the second lower portion, and a first distance between the first gate stack and the third gate stack is less than a second distance between the first gate stack and the second gate stack.
A semiconductor device structure, comprising:
- a substrate;
- a gate stack over the substrate, wherein the gate stack has a first portion and a second portion under the first portion, and the first portion is wider than the second portion;
- a first spacer and a second spacer over opposite sides of the gate stack, wherein the first spacer has a first upper portion and a first lower portion, the second spacer has a second upper portion and a second lower portion a distance between the first upper portion and the second upper portion continuously increases in a direction away from the substrate, the first spacer has a recess, the first upper portion is between the recess and the gate stack, and the first lower portion is under the recess;
- and
- an etch stop layer partially in the recess and extending onto the substrate, wherein the recess has a first inner wall and a second inner wall, the first inner wall faces away from the gate stack, and the second inner wall faces away from the substrate.
Dependencies are inferred from the claim text.