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US 10,763,176 B2Granted
Transistor with a gate structure comprising a tapered upper surface
AssigneeGlobalfoundries Inc.
InventorsHui Zang, Scott Beasor, Haiting Wang
Life of this patent
Estimating the term…
Abstract
One illustrative device disclosed includes a gate structure and a sidewall spacer positioned adjacent the gate structure, the sidewall spacer having an upper surface, wherein an upper portion of the gate structure is positioned above a level of the upper surface of the sidewall spacer. In this illustrative example, the device also includes a tapered upper surface on the upper portion of the gate structure and a gate cap, the gate cap being positioned above the tapered upper surface of the gate structure and above the upper surface of the sidewall spacer.
Claims20
A device, comprising:
- a gate structure of a transistor;
- a sidewall spacer positioned adjacent said gate structure, said sidewall spacer having an upper surface, wherein an upper portion of said gate structure is positioned above a level of said upper surface of said sidewall spacer;
- a tapered upper surface on said upper portion of said gate structure;
- and
- a gate cap, said gate cap being positioned above said tapered upper surface of said gate structure and above said upper surface of said sidewall spacer.
2 more elements
A device, comprising:
- a gate structure of a transistor, said gate structure having an axial length;
- a sidewall spacer positioned adjacent said gate structure, said sidewall spacer having an upper surface, wherein an upper portion of said gate structure is positioned above a level of said upper surface of said sidewall spacer;
- a tapered upper surface on said upper portion of said gate structure, wherein said tapered upper surface extends for substantially an entirety of said axial length of said gate structure;
- a gate cap, said gate cap being positioned above said tapered upper surface of said gate structure and above said upper surface of said sidewall spacer;
- and
- a lower conductive gate contact structure that physically and conductively contacts said tapered upper surface, wherein a portion of said gate cap is positioned between a bottom surface of said lower conductive gate contact structure and said upper surface of said sidewall spacer.
3 more elements
A device, comprising:
- a gate structure or a transistor, said transistor having a gate length that extends in a gate length direction, said gate structure having an axial length, said gate structure comprising an upper portion and a lower portion;
- a sidewall spacer positioned adjacent said gate structure, said sidewall spacer having an upper surface, wherein an upper portion of said gate structure is positioned above a level of said upper surface of said sidewall spacer and said lower portion of said gate structure is positioned below said level of said upper surface of said sidewall spacer, wherein said lower portion of said gate structure has a first lateral width in said gate length direction and said upper portion of said gate structure has a second lateral width in said gate length direction, wherein said second lateral width is less than said first lateral width;
- a tapered upper surface on said upper portion of said gate structure, wherein said tapered upper surface extends for substantially an entirety of said axial length of said gate structure;
- a gate cap, said gate cap being positioned above said tapered upper surface of said gate structure and above said upper surface of said sidewall spacer;
- and
- a lower conductive gate contact structure that physically and conductively contacts said tapered upper surface, wherein a portion of said gate cap is positioned between a bottom surface of said lower conductive gate contact structure and said upper surface of said sidewall spacer.
3 more elements
Dependencies are inferred from the claim text.