Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsEn-Chiuan Liou, Yu-Cheng Tung
Life of this patent
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Abstract
A semiconductor device and a method of forming the same, the semiconductor device includes a substrate, a plurality of fin shaped structures and an insulating layer. The substrate has a fin field-effect transistor (finFET) region, a first region, a second region and a third region. The first region, the second region and the third region have a first surface, a second surface, and a third surface, respectively, where the first surface is relatively higher than the second surface and the second surface is relatively higher than the third surface. The fin shaped structures are disposed on a surface of the fin field-effect transistor region. The insulating layer covers the first surface, the second surface and the third surface.
Claims10
A semiconductor device, comprising:
- a substrate, having a fin field effect transistor (finFET) region, a first region and a second region, the finFET region having a surface, the first region and the second region extending along two different directions and having a first surface and a second surface respectively sunken downwardly from the surface, wherein the first surface is relatively higher than the second surface;
- a plurality of bumps disposed on the first surface and the second surface respectively;
- a plurality of fin shaped structures, disposed on the surface of the finFET region, wherein the fin shaped structures are extended along a same extending direction of the first region and the surface of the finFET region is coplanar with a base of the fin shaped structures;
- and
- an insulating layer, covering the first surface, the second surface, and a bottom portion of the fin shaped structures, to form a first shallow trench isolation (STI) in the first region, a second STI in the second region and a third STI in the finFET region, wherein the first STI, the second STI and the third STI have different depths.
A method of forming a semiconductor device, comprising:
- providing a substrate having a fin field effect transistor (finFET) region, a first region, a second region and a third region, wherein the finFET region has a surface, the first region and the second region extend along two different directions and have a first surface and a second surface respectively sunken downwardly from the surface, the first surface is higher than the second surface, wherein a plurality of bumps are disposed on the first surface and the second surface respectively;
- forming a plurality of fin shaped structures on the surface of the finFET region, wherein the fin shaped structures are extended along a same extending direction of the first region and the surface of the finFET region is coplanar with a base of the fin shaped structures;
- and
- forming an insulating layer, covering the first surface, the second surface, and a bottom portion of the fin shaped structures, to form a first shallow trench isolation (STI) in the first region, a second STI in the second region, and a third STI in the finFET region, wherein the first STI, the second STI and the third STI have different depths.
Dependencies are inferred from the claim text.