Back to results
US 10,763,164 B2Granted
Package structure with inductor and method of forming thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Lin Chen, Chung-Hao Tsai, Jeng-Shien Hsieh, Chuei-Tang Wang, Chen-Hua Yu, Chih-Yuan Chang
Life of this patent
Estimating the term…
Abstract
A package structure includes a first redistribution layer, a molding material, a semiconductor device and an inductor. The molding material is located on the first redistribution layer. The semiconductor device is molded in the molding material. The inductor penetrates through the molding material and electrically connected to the semiconductor device.
Claims20
A package structure, comprising:
- a first redistribution layer;
- a first molding material extending along a top surface of the first redistribution layer;
- a second molding material extending along a bottom surface of the first redistribution layer;
- a first semiconductor die penetrating through the first molding material;
- an inductor penetrating through the first and second molding materials and electrically connected to the first semiconductor die,
- wherein the first redistribution layer includes a first dielectric structure and a first conductive feature in the first dielectric structure and the first conductive feature is electrically coupled to the first semiconductor die and the inductor;
- and
- a second semiconductor die penetrating through the second molding material, wherein a bottom surface of the second semiconductor die is substantially level with a bottom surface of the inductor.
5 more elements
A package structure, comprising:
- a first redistribution layer;
- a semiconductor die on the first redistribution layer;
- a molding material embedding the semiconductor die;
- and
- an inductor comprising first, second, and third through-vias and a conductive feature, wherein the first and second through-vias align with each other in a first direction, the first and third through-vias align with each other in a second direction transverse to the first direction, the first, second, and third through-vias penetrate through the molding material and extend in a third direction transverse to the first and second directions, the conductive feature has a U-shaped cross-section and includes first and second portions embedded in the first redistribution layer, and each of the first and second portions of the conductive feature extends from a respective one of the first and second through-vias.
2 more elements
A package structure, comprising:
- a first redistribution layer comprising a first dielectric structure and a first conductive feature in the first dielectric structure;
- a second redistribution layer comprising a second dielectric structure and a second conductive feature in the second dielectric structure;
- a molding compound extending between the first and second redistribution layers;
- a semiconductor die embedded in the molding compound;
- and
- an inductor comprising first, second and third through-vias penetrating through the molding compound and being a helical inductor, wherein the first conductive feature of the first redistribution layer is electrically coupled to the semiconductor die and the inductor, in contact with tops of the first and second through-vias, and spaced apart from the third through-via, and the second conductive feature of the second redistribution layer is in contact with bottoms of the second and third through-vias and spaced apart from the first through-via.
3 more elements
Dependencies are inferred from the claim text.