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US 10,763,162 B2Granted
Interconnect structure of semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Ching Tsai, Yi-Wei Chiu, Li-Te Hsu
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Abstract
A device includes a substrate, a first dielectric layer over the substrate, a first conductive feature in the first dielectric layer, and an etch stop layer over the first dielectric layer. The etch stop layer includes metal-doped aluminum nitride. The device further includes a second dielectric layer over the etch stop layer, and a second conductive feature in the second dielectric layer. The second conductive feature extends into the etch stop layer and contacts the first conductive feature.
Claims20
A method comprising:
- forming a conductive line in a first dielectric layer;
- forming a metal-doped etch stop layer over the first dielectric layer;
- forming a second dielectric layer over the metal-doped etch stop layer;
- etching the second dielectric layer and the metal-doped etch stop layer to form an opening, wherein a portion of the metal-doped etch stop layer is interposed between a bottom of the opening and the conductive line;
- sputtering the portion of the metal-doped etch stop layer to extend the opening toward the conductive line and form an extended opening, wherein the extended opening exposes a top surface of the conductive line;
- and
- filling the extended opening with a conductive material to form a conductive via in the second dielectric layer.
4 more elements
A method comprising:
- forming a conductive line in a first dielectric layer;
- depositing a metal-doped etch stop layer over the first dielectric layer;
- depositing a second dielectric layer over the metal-doped etch stop layer;
- performing a first patterning process on the second dielectric layer to form an opening in the second dielectric layer;
- performing a second patterning process on the second dielectric layer and the metal-doped etch stop layer to extend the opening into the metal-doped etch stop layer, wherein a bottom of the opening is disposed within the metal-doped etch stop layer after performing the second patterning process;
- performing a sputtering process on the bottom of the opening to expose a portion of the conductive line;
- and
- depositing a conductive material into the opening to form a conductive via in the second dielectric layer.
5 more elements
A method comprising:
- forming a metallization layer over a substrate;
- depositing a metal-doped aluminum nitride layer over the metallization layer;
- depositing a dielectric layer over the metal-doped aluminum nitride layer;
- performing a first etch process on the dielectric layer to form an opening in the dielectric layer, wherein the opening exposes the metal-doped aluminum nitride layer;
- performing a second etch process on the dielectric layer and the metal-doped aluminum nitride layer to extend the opening into the metal-doped aluminum nitride layer, wherein a portion of the metal-doped aluminum nitride layer is interposed between a bottom of the opening and a top surface of the metallization layer after performing the second etch process;
- removing the portion of the metal-doped aluminum nitride layer to expose a conductive feature of the metallization layer;
- and
- filling the opening with a conductive material.
5 more elements
Dependencies are inferred from the claim text.