Integrated circuit device

An integrated circuit device comprising:

• a substrate having a first region and a second region;
• a first fin-isolation insulating portion in each of the first region and the second region and having a first width in a first direction;
• a pair of fin-type active regions spaced apart from each other in each of the first region and the second region with the first fin-isolation insulating portion therebetween, and extending in a straight line in the first direction;
• one or more second fin-isolation insulating portions vertically overlapping a portion of the first fin-isolation insulating portion in at least one of the first region and the second region, extending in a second direction crossing the first direction, and having a second width that is less than the first width in the first direction;
• and
• a plurality of gate structures extending in the second direction and comprising a plurality of dummy gate structures,
• wherein a pair of dummy gate structures from among the plurality of dummy gate structures extend in a straight line in the second direction with one second fin-isolation insulating portion therebetween, and one or more dummy gate structures from among the plurality of dummy gate structures, except the pair of dummy gate structures, vertically overlap a portion of the first fin-isolation insulating portion in the second region.

An integrated circuit device comprising:

• a substrate having a first region and a second region;
• a first fin-isolation insulating portion in each of the first region and the second region and having a first width in a first direction;
• a pair of fin-type active regions spaced apart from each other in each of the first region and the second region with the first fin-isolation insulating portion therebetween, and extending in a straight line in the first direction;
• a pair of second fin-isolation insulating portions contacting, in each of the first region and the second region, the two side walls of the first fin-isolation insulating portion, respectively, each of the two side walls facing the opposite sides in the first direction;
• and
• a plurality of gate structures extending in a second direction and comprising a plurality of dummy gate structures,
• wherein at least a portion of the pair of second fin-isolation insulating portions in the first region and at least a portion of the pair of second fin-isolation insulating portions in the second region have a different material from each other.